Gallium nitride-based light-emitting diode and preparation method thereof
A light-emitting diode and gallium nitride-based technology, applied in the field of ion beams, can solve problems such as the ratio error between gallium and nitrogen elements in thin films, the problems that need to be improved, and the damage to the structure of gallium nitride semiconductor films, etc., to achieve uniform thickness, high precision, The effect of overcoming the ratio error
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preparation example Construction
[0049] The preparation method of the gallium nitride semiconductor thin film provided by the present invention adopts dual ion sources to bombard the gallium-containing target 3 and the substrate 8 respectively. Among them, argon (Ar) is filled in the main ion source 1 to generate argon (Ar + ) ion beam 2 bombards the gallium-containing target 3 , and the sputtered particles 5 generated are deposited on the substrate 8 . At the same time, ammonia gas (NH 3 ) or nitrogen (N 2 ), producing nitrogen (N + ) ion beam 7 bombards the surface of substrate 8, wherein nitrogen ions (N + ) combined with the sputtered particles 5 deposited on the surface of the substrate 8 to form a gallium nitride semiconductor thin film. The gallium-containing target 3 contains gallium element, so gallium atoms in the sputtered particles 5 can chemically react with nitrogen ions to form gallium nitride. Preferably, the gallium-containing target 3 also contains group IIIA elements or other elements....
no. 1 example
[0064] see figure 2 , is a structural schematic diagram of the first embodiment of the GaN-based light-emitting diode according to the present invention. Such as figure 2 As shown, the gallium nitride-based light emitting diode is a vertical structure light emitting diode. Correspondingly, the first embodiment of the preparation method of the GaN-based light-emitting diode provided by the present invention includes the following steps:
[0065] 1) A substrate 8 is provided, and gold targets, gallium-silicon targets, gallium-aluminum targets, gallium-indium targets, gallium-magnesium targets, and silicon dioxide targets are provided. The preferred compositions of these six targets are shown in Table 2.
[0066] Form 2
[0067]
[0068] In an environment with a temperature ≦28°C, fix the following 6 types of targets with a diameter of 100mm and a thickness of 3mm on the 1#~6# target positions of the six-target stage respectively. A substrate 8 with a thickness of 400 n...
no. 3 example
[0104] see Figure 4 , is a schematic structural diagram of a third embodiment of a GaN-based light-emitting diode according to the present invention. Such as Figure 4 As shown, the GaN-based light-emitting diode is a flip-chip light-emitting diode. Correspondingly, the third embodiment of the method for manufacturing a GaN-based light-emitting diode provided by the present invention includes the following steps:
[0105] 1) Provide sapphire 19, and provide gold targets, gallium-silicon targets, gallium-aluminum targets, gallium-indium targets and gallium-magnesium targets. The preferred compositions of these five targets are shown in Table 4.
[0106] Form 4
[0107]
[0108] 2) Select the gallium magnesium target, use the patterned p-GaN photoresist as a mask, and generate Ar from the main ion source 1 + The ion beam 2 bombards the GaMg target, and the auxiliary ion source 6 produces N + The ion beam 7 bombards the surface of the sapphire 19 , and the p-GaN film 13...
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