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A chemical synthesis method of inorganic non-lead halide perovskite thin film

A halide perovskite, chemical synthesis technology, applied in the direction of semiconductor devices, electrical components, photovoltaic power generation, etc., can solve the problems of Pb pollution, organic matter instability, etc., and achieve low equipment requirements, low cost, and solve unstable performance Effect

Inactive Publication Date: 2019-02-15
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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Problems solved by technology

[0004] The purpose of the present invention is to provide a chemical synthesis method of an inorganic non-lead halide perovskite film, which mainly solves the problems of organic matter instability and Pb pollution in the existing organic-inorganic metal compound perovskite

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  • A chemical synthesis method of inorganic non-lead halide perovskite thin film
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  • A chemical synthesis method of inorganic non-lead halide perovskite thin film

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Embodiment

[0029] The invention provides a kind of inorganic non-lead halide (chemical formula is CsSnX 3 or Cs 2 wxya 6 , X is one or more of the halogen elements Cl, Br or I) perovskite thin films, which are mainly used in perovskite batteries. like figure 1 As shown, the process of preparing this kind of inorganic non-lead halide perovskite film is as follows:

[0030] 1. CsSnX 3 / Cs 2 wxya 6 Synthesis of Inorganic Non-Lead Halide Perovskite Precursor Solutions

[0031] (1) SnX 2 Dissolve in an organic solvent, and magnetically stir until completely dissolved, with a solubility of 0.1-5mol / L; the organic solvent is preferably DMF, DMSO, ether or isopropanol;

[0032] (2) Add CsX to mix (CsX and SnX 2 The molar mass ratio is 1-2:1), and stirred at 50-100°C and protected from light for 2-24 hours to obtain CsSnX 3 / Cs 2 wxya 6 Inorganic non-lead halide perovskite precursor solution;

[0033] The above-mentioned CsSnX 3 / Cs 2 wxya 6 The synthesis process of the inorganic ...

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Abstract

The invention discloses a chemical synthesis method of an inorganic non-lead halide perovskite thin film, which comprises: (1) dissolving SnX2 in an organic solvent, and magnetically stirring until completely dissolved; (2) adding CsX and mixing, under light-proof conditions Stir to obtain the CsSnX3 / Cs2SnX6 inorganic non-lead halide perovskite precursor solution; (3) ultrasonically clean the substrate material and dry it with nitrogen; (4) place the substrate material in an ultraviolet ozone cleaner for irradiation treatment (5) Spread the CsSnX3 / Cs2SnX6 inorganic non-lead halide perovskite precursor solution on the surface of the substrate material, and then spin-coat; (6) heat the spin-coated material for a certain period of time, then cool it to room temperature, The CsSnX3 / Cs2SnX6 inorganic non-lead halide perovskite film is obtained. The CsSnX3 / Cs2SnX6 inorganic non-lead halide perovskite film prepared by the invention has good stability, low cost, low equipment requirements, and is green and pollution-free, so it is very suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of photovoltaic cells, in particular to a chemical synthesis method of an inorganic non-lead halide perovskite thin film. Background technique [0002] Halide-based perovskite has the characteristics of excellent light absorption ability, considerable ambipolar carrier mobility, and ultra-long electron-hole diffusion length, and it has gradually become one of the most important research hotspots in the field of photovoltaics today. one. The main organo-inorganic metal compound of the current halide perovskites is methylamine lead iodide (CH 3 NH 3 wxya 3 , X is one or more of Cl / Br / I), the main synthetic component of methylamine lead iodide is methylamine halide (CH 3 NH 3 X) It is easily hydrolyzed when exposed to water, resulting in extremely unstable performance of methylamine lead iodine perovskite, and methylamine lead iodine perovskite contains toxic Pb element, so this also limits perovskite batt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/44H01L51/46
CPCH10K30/00H10K30/80Y02E10/549
Inventor 杨盼杨丽军赵晓冲王劲川杨蕊竹
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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