Low-temperature solution preparation method of high-dielectric zirconium oxide thin film

Abstract

The invention belongs to the fields of new materials and micro-electronics, and particularly relates to a low-temperature solution preparation method of a high-dielectric zirconium oxide thin film. The method comprises the following steps: weighing soluble zirconium salt and measuring a solvent to prepare a zirconium oxide precursor solution with the concentration of 0.01 to 0.5 mole / liter, and performing magnetic stirring and ultrasonic dispersion for 0.1 to 3 hours to form a clarified zirconium oxide precursor solution; preparing a zirconium oxide thin film: coating a cleaned substrate with the zirconium oxide precursor solution to form a zirconium oxide precursor thin film, performing preheating treatment at 50 to 150 DEG C, then performing light wave annealing at certain power and temperature for certain time, coating the zirconium oxide precursor solution for multiple times according to the requirement on the thickness of the zirconium oxide thin film, and annealing to obtain the zirconium oxide dielectric thin film. The zirconium oxide thin film obtained by the method disclosed by the invention is high in dielectric property, and has important application prospect in the micro-electronics field of transistors, capacitors and the like. By means of the process, the conventional high-temperature solution process, the long process cycle or expensive equipment and the like can be avoided; the method is low in cost and suitable for industrial large-scale production.

Description

technical field [0001] The invention belongs to the field of new materials and microelectronics, and in particular relates to a low-temperature solution preparation method of a high-dielectric zirconia film. The zirconia film has important application prospects in microelectronic fields such as transistors and capacitors. Background technique [0002] In the field of microelectronics, the development of integrated circuits has always followed the development of Moore's law. With the continuous shrinking of the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), the core device of silicon-based integrated circuits, the thickness of its equivalent oxide layer is reduced to the nanometer level. As a traditional gate dielectric material, silicon dioxide is close to the physical limit. At this time, due to the quantum effect, the tunneling leakage current of the MOS increases sharply, which affects the reliability and stability of the device. Therefore, f...

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Problems solved by technology

However, these gas-phase methods usually require a vacuum environment, increasing the complexity of the equipment and increasing the cost

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