Method for characterization of graphene epitaxially grown on SiC based on Ag-particle Raman enhancement effect

An enhancement effect, graphene technology, applied in the field of microelectronic materials, can solve the problems of sample contamination, difficulty in sample preparation, inability to directly characterize the degree of hydrogen insertion, etc., to achieve the effect of strong operability and simple method.

Active Publication Date: 2017-03-15
SHANDONG UNIV
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Problems solved by technology

[0007] In general, there are many problems in the existing characterization methods for hydrogen-inserted quasi-free graphene, such as the inability to directly characterize the degree of hydrogen insertion, difficulty in sample preparation, and serious contamination of samples; therefore, to invent a direct and accurate Metrics are important

Method used

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  • Method for characterization of graphene epitaxially grown on SiC based on Ag-particle Raman enhancement effect
  • Method for characterization of graphene epitaxially grown on SiC based on Ag-particle Raman enhancement effect
  • Method for characterization of graphene epitaxially grown on SiC based on Ag-particle Raman enhancement effect

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Embodiment 1

[0043] The Raman spectrometer used in this example is Horiba HR800, and the laser excitation wavelength is 532nm. SiC substrate is used, the conductivity type is semi-insulating or N-type, the substrate surface is biased forward or 4°, 8°, the diameter is 2-6 inches, and the thickness is 300μm-400μm.

[0044] A method for characterizing the Raman enhancement effect of Ag particles based on SiC epitaxial graphene, comprising the following steps:

[0045] (1) Prepare 0.5mol / L AgNO 3 Solution; the ratio of the amount of substance is 4:1 to prepare the NaBH of 0.125mol / L 4 solution, add an appropriate amount of NaOH; under magnetic stirring, control 2mL / min to NaBH 4 The solution was added dropwise to AgNO 3 In the solution, the reaction temperature is controlled at 40-50° C. until the reaction is completed; the reaction product is centrifuged at a high speed of 9000 r / min, and washed with deionized water and ethanol to obtain Ag particles. figure 1 In the obtained Ag particle...

Embodiment 2

[0049] According to the characterization method identical with embodiment 1, its difference is:

[0050] Prepare 0.01mol / L AgNO 3 Solution, choose sodium citrate as the reducing agent, control the speed of 1mL / min to drop the reducing agent on the AgNO 3 In the solution, Ag sol is prepared, the Ag sol is dropped on the quasi-free state graphene wafer, heated to volatilize the liquid, and the quasi-free state graphene wafer with Ag particles deposited on the surface is obtained. The morphology of Ag particles is shown in image 3 In (c), (d) shown.

[0051] Graphene grown in situ on a SiC (0001) substrate was passed through H at 1000 °C 2 5h, carry out Raman characterization on it, get as follows figure 2 The Raman enhanced spectrum shown, and 2130cm -1 The proportion of the area with obvious Si-H bond response in the vicinity reaches 50%, that is, the buffer layer is removed in a large range.

Embodiment 3

[0053] According to the characterization method identical with embodiment 1, its difference is:

[0054] In step (1), first weigh 1 g of PVP as a surfactant, place it in deionized water, and fully dissolve it under ultrasonic conditions; then use this solution to prepare AgNO3 solution.

[0055] Graphene grown in situ on a SiC (0001) substrate was passed through H at 1500 °C 2 1h, using the same characterization method, the proportion of the area with Si-H bond response in the Raman spectrum reaches 100%, that is, the buffer layer is basically removed.

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Abstract

The invention relates to a method for characterization of graphene epitaxially grown on SiC based on Ag-particle Raman enhancement effect. The method comprises the following steps: uniformly spraying Ag particles onto a quasi-freestanding graphene wafer at first, and then carrying out testing by using microscopic Raman spectroscopy so as to learn about the situation of bonding of a Si-H bond. According to the invention, the intercalation degree of hydrogen atoms can be directly determined by directly characterizing the Si-H bond in virtue of the Ag-particle Raman enhancement effect; influence of experimental conditions on hydrogen intercalation effect is visually fed back by analyzing the proportion of the Si-H bond in a testing area; and during visual characterization of the Si-H bond, the characteristic G peak, 2D peak and defect D peak of graphene are enhanced to certain extents, which greatly helps further accurate analysis of the structure and the properties like defects of graphene.

Description

technical field [0001] The present invention relates to a method for characterizing epitaxial graphene on a quasi-free SiC substrate based on Ag (silver) Raman enhancement effect, in particular to a method for characterizing epitaxial growth of graphene based on a large-diameter SiC (0001) surface, belonging to microelectronic materials technology field. Background technique [0002] Graphene is made of carbon atoms with sp 2 The atomic-level two-dimensional crystal material of the hexagonal honeycomb lattice formed by orbital hybridization has a high carrier mobility dozens of times that of commercial silicon wafers, and is little affected by temperature and doping effects, showing excellent Electron transport properties. Graphene crystals have important application value in ultra-high frequency electronic devices. However, the improvement of the performance of graphene electronic devices is severely restricted by the quality of graphene, and the preparation of high-qual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 陈秀芳孙丽徐现刚赵显
Owner SHANDONG UNIV
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