Full-automatic anti-light decay laser processing equipment of solar cell sheet

Abstract

The invention relates to full-automatic anti-light decay laser processing equipment of a solar cell sheet. A mechanical rotating arm assembly, a rotating temperature control adsorption work bench and a cell sheet transfer module are arranged on a processing table surface separately, wherein the rotating temperature control adsorption work bench and the cell sheet transfer module are distributed at two sides of the mechanical rotating arm assembly and can horizontally rotate on the processing table surface; two groups of temperature control suction cup modules which are symmetrically distributed side by side are arranged at the upper end of the rotating temperature control adsorption work bench; a feeding suction cup and a cooling and blanking suction cup are arranged at two ends of the mechanical rotating arm assembly; the feeding suction cup and the cooling and blanking suction cup can rotate to the upper parts of one group of temperature control suction cup modules or the cell sheet transfer module separately in the rotation process of the mechanical rotating arm assembly; and a laser generator module is located at the upper parts of the other groups of temperature control suction cup modules. The full-automatic anti-light decay laser processing equipment has the advantages of being simple in structure and convenient to use; quick cooling after preheating and processing can be achieved in the processing process of the cell sheet; and the processing efficiency is relatively high.

Description

technical field [0001] The invention relates to the technical field of cell processing, in particular to a fully automatic solar cell anti-light attenuation laser processing equipment. Background technique [0002] As photovoltaic solar crystalline silicon cells have developed into the mainstream of green new energy, the photovoltaic industry has become large-scale, and improving the power generation efficiency and light-induced attenuation rate of crystalline silicon cells has become the goal pursued by the industry. The formation of boron-oxygen complexes under light in crystalline silicon solar cells leads to LID phenomenon, and the power attenuation of boron-doped p-type cells can be as high as 5%. For the p-type high-efficiency cell structure-PERC (passive Emitter and back surface cell) technology, because the efficiency improvement comes from the passivation of the back of the cell and the improvement of the back reflection performance, the existence of the boron-oxyge...

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Problems solved by technology

[0003] At present, the problem of light attenuation of p-type high-efficiency solar cells can be solved by suppressing the formation of boron-oxygen complexes caused by defects in light attenuation. The method of suppressing boron-oxygen complexes includes ①reducing oxygen content, ②reducing boron concentration, and ③p-type gallium-doped silicon Crystal (gallium substituted for boron) ④ n-type silicon crystal (boron-free) ⑤ congener doped with germanium, tin and carbon-silicon crystal ⑥ high-temperature heat treatment, but the processing efficiency of the above methods is not ideal, and the processing process is relatively complicated, which is not suitable for high-efficiency production

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