A kind of preparation method of deuterium-containing metal film target

A technology of metal thin film and deuterium gas, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of reducing the bonding force between the film and the substrate, the deterioration of the mechanical properties of the film, and the reduction of deuterium absorption performance at high temperature. , to achieve the effect of reducing oxides and carbides, improving mechanical properties and controlling brittleness

Active Publication Date: 2019-09-20
INST OF FLUID PHYSICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

This method has the following defects: 1. After the hydrogen storage metal film absorbs deuterium, there will be unique hydrogen embrittlement and volume expansion, which will deteriorate the mechanical properties of the film, reduce the bonding force between the film and the substrate, and cause the target film to drop powder. This phenomenon is more likely to occur after deuterium ion bombardment
2. The hydrogen storage metal film is easily polluted by carbon, oxygen and other elements, forming carbides or oxides with a thickness of dozens or even tens of nanometers on the surface, which reduces the performance of deuterium absorption at high temperature on the one hand, and will cause a decrease in neutron yield

Method used

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  • A kind of preparation method of deuterium-containing metal film target
  • A kind of preparation method of deuterium-containing metal film target
  • A kind of preparation method of deuterium-containing metal film target

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Embodiment

[0041] A method for preparing a deuterium-containing metal thin film target of the present invention, taking the magnetron sputtering coating technology as an example, the preparation process of the molybdenum-based deuterated scandium thin film target is carried out according to the following steps:

[0042] (a1) adopting 99.99% pure molybdenum with a thickness of 1mm, processed into a disc as the substrate substrate of the deuterium-containing metal thin film target;

[0043] (a2) The thickness of the substrate substrate is 0.5-1mm, and it is polished on one side, and the polishing accuracy is not higher than 0.4μm;

[0044] (a3) Degrease the polished substrate first in hot alkali, then remove the oxide layer in weak acid, then wash it with deionized water, and then put it into alcohol or acetone for ultrasonic cleaning for 5 minutes;

[0045] (a4) Put the cleaned substrate into a plasma cleaning machine, and use Ar plasma to clean the surface;

[0046] (b1) The substrate s...

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Abstract

The invention discloses a preparation method for a deuterium-containing metal film target. The preparation method comprises the following steps: firstly, using high-purity molybdenum or high-purity copper as a substrate material of the deuterium-containing metal film target, and performing surface pretreatment on the substrate material; secondly, mounting and placing the substrate into a physical vapor deposition (PVD) vacuum coating machine, bombarding the surface of the substrate with argon ions, removing an oxide layer on the surface of the substrate by sputtering; thirdly, setting the coating temperature of the substrate, introducing high-purity deuterium gas in a vacuum cavity, starting the coating machine, and directly preparing the deuterium-containing metal film; fourthly, turning off the coating machine, continually introducing deuterium gas into the vacuum cavity, and turning off a deuterium gas flower meter until an appropriate air pressure is reached in the cavity. By adopting the preparation method, the mechanical performance of the deuterium-containing metal film target is improved, the brittleness and occurrence of cracks are controlled effectively, and adhesive force of the target film is enhanced; meanwhile, the thickness of a dead layer on the surface is decreased, the purity of the target film is increased, the neutron yield of a neutron generator is increased, and the service life of the target is prolonged.

Description

technical field [0001] The invention relates to the field of metal hydrogen storage materials and the field of neutron generator target preparation, in particular to a method for preparing a deuterium-containing metal film target. Background technique [0002] Based on the mechanism of high-energy deuterium ions bombarding deuterium nuclei to generate neutrons, the deuterium-containing metal film target with high deuterium density is a key component of the neutron generator. During the operation of the neutron generator, the deuterium-containing metal film target is bombarded by the deuterium ion flow, and the local temperature of the surface will increase accordingly, which puts forward higher requirements for the thermal stability of the deuterium-containing metal film target. In addition, an oxide layer, commonly known as "dead layer", will inevitably form on the surface of the deuterium-containing metal thin film target. As the storage time increases, the oxide layer wil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/22C23C14/06C23C14/35C23C14/02
Inventor 王韬龙继东黄刚杨振蓝朝晖向军彭宇飞刘平刘尔祥吕璐
Owner INST OF FLUID PHYSICS CHINA ACAD OF ENG PHYSICS
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