Method for realizing enhanced HEMT (high-electron mobility transistor) by using P-type nitride electrochemical etching
An electrochemical and enhanced technology, applied in the field of microelectronics technology, can solve the problems of small etching selection ratio, difficult to control P-type semiconductor etching, etc., and achieve large etching control window, easy mass production, repeatability Good results
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[0016] One aspect of the present invention provides a method for realizing enhanced HEMT by electrochemical etching.
[0017] In some embodiments, the method may include:
[0018] Provide an etching sample (also referred to as the sample below), the epitaxial structure of the etching sample includes: a heterostructure mainly composed of a first semiconductor layer as a channel layer and a second semiconductor layer as a barrier layer , and, a third semiconductor layer disposed on the second semiconductor layer and depleting the two-dimensional electron gas in the heterostructure conductive channel, and the conductivity of the third semiconductor layer is higher than that of the second semiconductor layer semiconductor layer;
[0019] setting a patterned etching mask on the third semiconductor layer, and directly exposing a region of the third semiconductor layer exposed from the etching mask to an etching solution; The three semiconductor layers provide an etching current wi...
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