The present invention discloses a method for realizing an enhanced HEMT (high-
electron mobility 
transistor) by using P-type 
nitride electrochemical etching. The method includes the following steps that: an 
etching sample is provided, the epitaxial structure of the 
etching sample comprises a heterostructure and a third 
semiconductor layer, wherein the heterostructure is composed of a first 
semiconductor layer and a second 
semiconductor layer, the third semiconductor layer is arranged on the second semiconductor layer and can deplete a two-dimensional 
electron gas in the 
conductive channel of the heterostructure, and the 
conductivity of the third semiconductor layer is higher than the 
conductivity of the second semiconductor layer; and a patterned 
etching mask is arranged on the third semiconductor layer, regions of the third semiconductor layer, which protrude out from the etching 
mask, are directly exposed in an etching solution, and etching current of a set strength is provided for the third semiconductor layer, and therefore, 
electrochemical etching on the third semiconductor layer can be realized, and an 
electrochemical etching process can stop automatically when all regions of the third semiconductor layer except a region covered by the etching 
mask are completely etched. With the method of the invention adopted, the enhanced HEMT can be effectively realized. The method has the advantages of simple process, etching automatic stop, high 
repeatability, low cost, small etching loss, easiness in realizing large-scale production and the like.