The present invention discloses a method for realizing an enhanced HEMT (high-
electron mobility
transistor) by using P-type
nitride electrochemical etching. The method includes the following steps that: an
etching sample is provided, the epitaxial structure of the
etching sample comprises a heterostructure and a third
semiconductor layer, wherein the heterostructure is composed of a first
semiconductor layer and a second
semiconductor layer, the third semiconductor layer is arranged on the second semiconductor layer and can deplete a two-dimensional
electron gas in the
conductive channel of the heterostructure, and the
conductivity of the third semiconductor layer is higher than the
conductivity of the second semiconductor layer; and a patterned
etching mask is arranged on the third semiconductor layer, regions of the third semiconductor layer, which protrude out from the etching
mask, are directly exposed in an etching solution, and etching current of a set strength is provided for the third semiconductor layer, and therefore,
electrochemical etching on the third semiconductor layer can be realized, and an
electrochemical etching process can stop automatically when all regions of the third semiconductor layer except a region covered by the etching
mask are completely etched. With the method of the invention adopted, the enhanced HEMT can be effectively realized. The method has the advantages of simple process, etching automatic stop, high
repeatability, low cost, small etching loss, easiness in realizing large-scale production and the like.