The present invention discloses a method for realizing an enhanced HEMT (high-electron mobility transistor) by using P-type nitride electrochemical etching. The method includes the following steps that: an etching sample is provided, the epitaxial structure of the etching sample comprises a heterostructure and a third semiconductor layer, wherein the heterostructure is composed of a first semiconductor layer and a second semiconductor layer, the third semiconductor layer is arranged on the second semiconductor layer and can deplete a two-dimensional electron gas in the conductive channel of the heterostructure, and the conductivity of the third semiconductor layer is higher than the conductivity of the second semiconductor layer; and a patterned etching mask is arranged on the third semiconductor layer, regions of the third semiconductor layer, which protrude out from the etching mask, are directly exposed in an etching solution, and etching current of a set strength is provided for the third semiconductor layer, and therefore, electrochemical etching on the third semiconductor layer can be realized, and an electrochemical etching process can stop automatically when all regions of the third semiconductor layer except a region covered by the etching mask are completely etched. With the method of the invention adopted, the enhanced HEMT can be effectively realized. The method has the advantages of simple process, etching automatic stop, high repeatability, low cost, small etching loss, easiness in realizing large-scale production and the like.