The invention discloses a JFET (Junction Field Effect Transistor) and a manufacturing method thereof, and a micro inverter using the JFET. The JFET comprises a drain ohmic contact electrode, a substrate, a SiC drift layer, an N-type SiC channel layer, an N-type SiC ohmic contact layer and two gate Schottky contact electrodes. The manufacturing method comprises the following steps of providing the substrate; forming a SiC epitaxial layer; forming the N-type SiC channel layer and the SiC drift layer; forming the N-type SiC ohmic contact layer; forming drain and source ohmic contact electrodes; and forming the two gate Schottky contact electrodes. The micro inverter comprises capacitors C1, C2 and C3, an inductor L1, a JFET1, a JFET2 and a JFET3, and silicon carbide Schottky diodes D1, D2, D3 and D4. According to the JFET, the manufacturing method thereof, and the micro inverter, the realization is convenient, the cost is low, the working frequency and the working reliability of the micro inverter are improved, the loss and the price of electric energy are reduced, and the practicality is high.