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High-purity compact magnesium oxide target material and preparation method thereof

A magnesium oxide, dense technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of low productivity and incapable of mass production, and achieve low production cost, fine and uniform grain size, high purity uniform effect

Active Publication Date: 2017-04-26
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This preparation method requires thermal annealing, and cannot be produced in batches, and the productivity is low

Method used

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  • High-purity compact magnesium oxide target material and preparation method thereof
  • High-purity compact magnesium oxide target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Preparation of a high-purity dense magnesium oxide target

[0023] (1) Add zirconia balls to the original MgO powder with a purity of more than 99.99%, an average particle size of about 100nm, and a total content of impurity elements below 100ppm. 1:1, put it in a polyurethane ball mill tank, the speed is 200r / min, and grind for 16h to obtain MgO powder with good dispersibility, then take out the obtained MgO powder and pass it through a 200-mesh graduated sieve;

[0024] (2) Carry out cold isostatic pressing (CIP) molding to the powder after sieving in step (1), the molding pressure is 200MPa, and the holding time is 8min, obtains the MgO compact with certain strength;

[0025] (3) After calcining the MgO compact in step (2) at 500°C for 4 hours, heat up to 1000°C at a rate of 5°C / min and start vacuuming, and make the vacuum degree reach 0.85 Pa within 10 minutes; The heating rate is heated to the sintering temperature of 1400°C, and the sintering holding t...

Embodiment 2

[0028] The preparation method of the high-purity dense MgO target is the same as in Example 1, except that the vacuum sintering temperature is 1450°C.

Embodiment 3

[0030] The preparation method of the high-purity dense MgO target is the same as in Example 1, except that the vacuum sintering temperature is 1500°C.

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Abstract

The invention belongs to the technical field of novel material manufacturing and application and particularly relates to a high-purity compact magnesium oxide target material and a preparation method thereof. Magnesium oxide powder subjected to planetary ball milling are further subjected to isostatic cool pressing and vacuum sintering to obtain the near-net formed high-purity compact magnesium oxide target material, wherein a vacuum sintering temperature is 1400-1550 DEG C, heat preservation time is 2-10h, and a vacuum degree is 0.1-1.0Pa. The high-purity compact magnesium oxide target material prepared according to the method is 98.36% or above in compactness, 100ppm or below in total impurity element content, 7micron or blow in average grain size, 3.0micron or below in size deviation and 0.4micron or below in surface roughness Ra. The magnesium oxide target material prepared according to the method is high in purity and compactness and fine and uniform in grain size. The preparation method has advantages of short production cycle, low production cost, high production efficiency and availability for batch production.

Description

technical field [0001] The invention belongs to the technical field of new material manufacture and application, and in particular relates to a high-purity dense magnesium oxide target and a preparation method thereof. Background technique [0002] Magnesium oxide (MgO) has the advantages of high temperature stability, high dielectric properties, low dielectric loss, and good lattice matching with various substrate materials. When MgO is used as the cathode source of the magnetic tunnel junction (MTJ) isolation layer, the MTJ It has a huge magnetoresistance effect at room temperature. As a key component of magnetic memory (MRAM), the higher the magnetoresistance effect of MTJ, the faster the reading and writing speed of MRAM, the lower the energy consumption and the longer the service life. Therefore, MgO thin films are widely used in new-generation nonvolatile high-density magnetic memories. [0003] The MgO thin film in MTJ is usually prepared by magnetron sputtering met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/04C04B35/626C04B35/64C23C14/35
CPCC04B35/04C04B35/6261C04B35/64C04B2235/6562C04B2235/6581C04B2235/77C04B2235/786C04B2235/963C23C14/3414C23C14/35
Inventor 陈淼琴何金江丁照崇贺昕熊晓东万小勇李勇军雷继锋
Owner GRIKIN ADVANCED MATERIALS
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