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Mass production technique of graphene

A production process and graphene technology, applied in the field of graphene, can solve the problems of reduced electrical conductivity and specific surface area of ​​graphene, defects in carbon growth and connection, complicated graphene transfer process, etc. Structural defects, the effect of non-agglomeration of properties

Inactive Publication Date: 2017-05-10
北京圣盟科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these two methods can prepare single-layer graphene in large quantities, the transfer process of graphene in the later stage of chemical vapor deposition method is relatively complicated, and the preparation cost is high, and there are often defects in the growth and connection of carbon inside the substrate.
However, the preparation of graphene by the redox method is easy to agglomerate, resulting in a decrease in the electrical conductivity and specific surface area of ​​graphene, which further affects its application in optoelectronic devices; The loss of carbon atoms, etc., the production method restricts the industrialization of graphene

Method used

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Experimental program
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Effect test

Embodiment 1

[0054] The concentrated sulfuric acid with a mass concentration of 98% in the sulfuric acid storage tank is sent to the mixing tank through the No. 1 centrifugal pump and the high-level tank; graphite powder is added to the concentrated sulfuric acid in the mixing tank under stirring conditions, and after stirring evenly, the No. 2 centrifugal pump is sent into two oxidation kettles;

[0055] Add the concentrated sulfuric acid that weight concentration is 98% in 2 oxidation kettles, and add potassium permanganate in several times, carry out reaction, the material after the reaction finishes is sent into 2 via No. 3 centrifugal pump, cache kettle, No. 4 centrifugal pump. a quenching tank;

[0056] Add hydrogen peroxide to the two quenching kettles to carry out the quenching reaction. After the reaction, the material is sent into the osmosis kettle by the No. 12 centrifugal pump, and deionized water is injected into the osmosis kettle. Washing, the washed material is sent to th...

Embodiment 2

[0064] The concentrated sulfuric acid with a mass concentration of 98% in the sulfuric acid storage tank is sent to the mixing tank through the No. 1 centrifugal pump and the high-level tank; graphite powder is added to the concentrated sulfuric acid in the mixing tank under stirring conditions, and after stirring evenly, the No. 2 centrifugal pump is sent into two oxidation kettles;

[0065] Add the concentrated sulfuric acid that weight concentration is 98% in 2 oxidation kettles, and add potassium permanganate in several times, carry out reaction, the material after the reaction finishes is sent into 2 via No. 3 centrifugal pump, cache kettle, No. 4 centrifugal pump. a quenching tank;

[0066] Add hydrogen peroxide to the 2 quenching kettles to carry out the quenching reaction. The material after the reaction is sent to 5 sedimentation kettles by the No. 13 centrifugal pump, and deionized water is added to the 5 sedimentation kettles for sedimentation. The material enters ...

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Abstract

The invention discloses a mass production technique of graphene. The production technique for preparing graphene has the advantages of wide raw materials and low cost, can implement large-scale industrial production, and can simultaneously produce many types of graphene for different application fields. The prepared graphene product has the advantages of high yield, stable performance, no aggregation, low production cost and high production efficiency, overcomes the crystal structure defects, enhances the few layer rate of graphene, and implements industrialization on graphene application.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a production process for preparing graphene in large quantities. Background technique [0002] Graphene is the thinnest and hardest nano-material known in the world. It is almost completely transparent and only absorbs 2.3% of light; its thermal conductivity is as high as 5300W / m K, which is higher than that of carbon nanotubes and diamonds; at room temperature, its Electron mobility over 15000cm 2 / V·s, which is higher than that of carbon nanotubes or silicon crystals; and the resistivity is only about 10 -6 Ω·cm, lower than copper or silver, is the material with the smallest resistivity in the world. [0003] There are many methods for preparing graphene, such as chemical vapor deposition and oxidation-reduction methods. Although these two methods can prepare single-layer graphene in large quantities, the transfer process of graphene in the later stage of the chemical vapor depositio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B2204/04C01B2204/32C01P2002/72C01P2004/03
Inventor 王为军
Owner 北京圣盟科技有限公司
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