cuins 2 Preparation method of alloy quantum dots

A technology of quantum dots and quantum dot solutions, applied in chemical instruments and methods, gallium/indium/thallium compounds, inorganic chemistry, etc., can solve problems such as the composition and size of alloy quantum dots are difficult to effectively control, and achieve uniform and stable size structure, The particle size is synchronously uniform and stable, and the effect of reducing environmental pollution

Active Publication Date: 2020-05-01
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of CuInS 2 The preparation method of alloy quantum dots aims to solve the problem that it is difficult to effectively control the composition and size of alloy quantum dots during a single synthesis of quantum dot nanocrystals, especially alloy quantum dot nanocrystals

Method used

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preparation example Construction

[0012] The embodiment of the present invention provides a CuInS 2 Preparation method of alloy quantum dots, the CuInS 2 Alloy quantum dots are prepared by cation exchange technology, which specifically includes the following steps:

[0013] S01. Preparation of In 2 S 3 Quantum dots: provide inorganic indium salt, elemental sulfur, organic amine or organic phosphine, mix the inorganic indium salt, elemental sulfur with the organic amine or organic phosphine, stir and degas under an inert atmosphere to form a mixed solution, and mix the The mixed solution was heated to 80-150°C under an inert atmosphere, kept at a temperature of 35-80 minutes, continued to be heated to 180-250°C, and reacted for 40-80 minutes to prepare In 2 S 3 quantum dots;

[0014] S02. Preparation of CuInS 2 Alloy quantum dots: the In 2 S 3 The quantum dots were dissolved in a non-polar solvent and stirred under an inert atmosphere to obtain In 2 S 3 Quantum dot solution; dissolving the copper ion ...

Embodiment 1

[0035] A red-emitting CuInS with an aspect ratio of 10nm:5nm 2 A method for preparing alloy quantum dots, comprising the following steps:

[0036] S11. Preparation of In 2 S 3 Quantum dots: 1mmol anhydrous indium chloride (InCl 3 ), 1.5mmol elemental sulfur (Sulfur) and 20ml oleylamine (Oleylamine) were mixed at the same time, stirred under vacuum for 30mins and degassed for 60mins, then heated the degassed mixture to 110°C under an inert atmosphere, kept it for 1h, and continued to heat to 215°C, react for 1h, and produce In 2 S 3 alloy quantum dots. Stop heating, wait for the reaction solution to cool down to room temperature, precipitate with methanol, centrifuge and purify, then dissolve with toluene, precipitate with methanol, and purify by centrifugation. Repeated many times can obtain In which satisfies the purity condition 2 S 3 alloy quantum dots.

[0037] S12. Preparation of CuInS by Cation Exchange 2 Alloy quantum dots: In an inert gas atmosphere, 1mmol In...

Embodiment 2

[0039] A near-infrared luminescent CuInS with an aspect ratio of 10nm:5nm 2 A method for preparing alloy quantum dots, comprising the following steps:

[0040] S21. Preparation of In 2 S 3 Quantum dots: Mix 1mmol anhydrous indium chloride, 1.5mmol elemental sulfur and 20ml oleylamine at the same time, stir under vacuum for 30mins and degas for 60mins, then heat the degassed mixture to 110°C under an inert atmosphere, and keep it warm for 1h , continue heating to 215°C, react for 1h, and produce In 2 S 3 alloy quantum dots. Stop heating, wait for the reaction solution to cool down to room temperature, precipitate with methanol, centrifuge and purify, then dissolve with toluene, precipitate with methanol, and purify by centrifugation. Repeated many times can obtain In which satisfies the purity condition 2 S 3 alloy quantum dots.

[0041] S22. Preparation of CuInS by Cation Exchange 2 Alloy quantum dots: In an inert gas atmosphere, 1mmol In 2 S 3 Alloy quantum dots we...

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Abstract

The invention provides a preparation method of CuInS2 alloy quantum points. The method comprises the following steps of preparing In2S3 quantum points; providing inorganic indium salt, elemental sulfur, organic amine or organic phosphorus; mixing the inorganic indium salt, the elemental sulfur, the organic amine or the organic phosphorus; performing stirring in insert atmosphere, and performing degassing treatment to form a mixed solution; heating the mixed solution to 80 to 150 DEG C in the insert atmosphere; continuously heating the materials to 180 to 250 DEG C; performing preparation to obtain the In2S3 quantum points; preparing CuInS2 alloy quantum points; dissolving the In2S3 quantum points into a non-polar solvent; performing stirring treatment in the insert atmosphere to obtain an In2S3 quantum point solution; dissolving copper ion precursors into thiol; performing stirring treatment in the insert atmosphere; obtaining a Cu-thiol ligand solution; injecting the Cu-thiol ligand solution into the In2S3 quantum point solution at uniform speed to perform cation exchange; performing purification treatment; obtaining the CuInS2 alloy quantum points.

Description

technical field [0001] The invention belongs to the technical field of quantum dot synthesis, in particular to a CuInS 2 Preparation method of alloy quantum dots. Background technique [0002] Quantum dots are a new type of semiconductor nanomaterials, which have unique size-dependent optoelectronic properties. As a luminescent material, they have the advantages of high energy efficiency, high stability, and wide color gamut. In recent years, quantum dot materials have received extensive attention from fields such as display, lighting, solar cells, and biomarkers. [0003] After more than 20 years of development, quantum dot synthesis technology has made remarkable achievements, and various high-quality quantum dot nanomaterials can be synthesized. At present, the continuously improved solution synthesis method has been able to achieve highly tunable quantum dot materials in terms of composition, size, and crystal structure. However, in the process of solution synthesis, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/62B82Y20/00B82Y40/00C01G15/00
CPCB82Y20/00B82Y40/00C01G15/00C01P2004/64C09K11/621
Inventor 陈开敏刘政杨一行
Owner TCL CORPORATION
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