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Carbon quantum dot enhanced photoelectric detector and preparation method thereof

A technology of photodetectors and carbon quantum dots, applied in the field of photodetectors, can solve problems that have not been found and reported, and achieve the effects of simple preparation process, easy promotion and low cost

Inactive Publication Date: 2017-05-10
庄爱芹
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the detection of some dangerous gases, such as methane, by germanium silicide sensors has not been reported so far.

Method used

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  • Carbon quantum dot enhanced photoelectric detector and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Clean the polyimide flexible substrate in deionized water and dry it;

[0023] 2) Using magnetron sputtering to deposit 40 nanometers of indium-doped germanium on a polyimide flexible substrate;

[0024] 3) Depositing a 6-micron-thick germanium tin layer on the indium-doped germanium tin layer by physical vapor deposition technology, and reserving an area for growing the first electrode on the ITO layer;

[0025] 4) Depositing germanium silicide on the germanium tin layer;

[0026] 5) spin coating the carbon quantum dot solution on the germanium silicide, and reserve an area for growing the second electrode on the germanium silicide; the diameter of the carbon quantum dot is 1nm-1μm;

[0027] 6) Coating silver paste on the reserved area of ​​germanium silicide and the reserved area on the ITO layer and drying; obtaining a germanium silicide / germanium tin oxide photodetector enhanced by carbon quantum dots.

Embodiment 2

[0029] 1) Clean the glass substrate in deionized water and dry it;

[0030] 2) Deposit 200 nanometer thick fluorine-doped germanium tin oxide on the glass substrate by magnetron sputtering;

[0031] 3) Depositing an 8 micron-thick germanium tin layer on the fluorine-doped germanium tin layer by physical vapor deposition technology, and reserving an area for growing the first electrode on the FTO layer;

[0032] 4) Depositing germanium silicide on the germanium tin layer;

[0033] 5) Spraying a carbon quantum dot solution on the germanium silicide, and reserving an area for growing the second electrode on the germanium silicide layer; the diameter of the carbon quantum dot is 1nm-1μm;

[0034] 6) thermally evaporating gold electrodes at the reserved area of ​​the germanium silicide layer and the reserved area on the fluorine-doped germanium tin oxide layer; obtaining a germanium silicon oxide / germanium tin oxide photodetector enhanced by carbon quantum dots.

Embodiment 3

[0036] 1) Clean the ceramic substrate in deionized water and dry it;

[0037] 2) Electron beam evaporation is used to deposit nickel metal with a thickness of 60 nanometers on the ceramic substrate;

[0038] 3) Depositing a germanium tin oxide layer with a thickness of 5 microns on the nickel metal layer by chemical water bath method, and reserving an area for growing the first electrode on the nickel metal layer;

[0039] 4) Depositing germanium silicide on the germanium tin layer;

[0040] 5) preparing a carbon quantum dot film on the germanium silicide layer, and reserving an area for growing the second electrode on the germanium silicide layer;

[0041] 6) screen-print silver electrodes on the reserved area of ​​the germanium silicide layer and the reserved area on the nickel metal layer; obtain a germanium silicide / germanium tin oxide photodetector enhanced by carbon quantum dots.

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Abstract

The invention relates to a carbon quantum dot enhanced photoelectric detector and a preparation method thereof. The germanium silicide / germanium stannide photoelectric detector includes a substrate, a conductive film plated layer, a germanium stannide layer, a germanium silicide layer and a carbon quantum dot layer from bottom to top successively, the photoelectric detector is provided with first and second electrodes respectively, the first electrode is arranged on the conductive film plated layer, and the second electrode is arranged on the germanium silicide layer. The preparation method comprises that the conductive film plated layer is deposited on the substrate, and then, the germanium stannide layer is deposited; the germanium silicide layer is deposited on the germanium stannide layer; the carbon quantum dot layer is prepared on the germanium silicide layer; and the electrodes are prepared on the germanium silicide layer and the conductive film plated layer respectively to obtain the photoelectric detector. The carbon quantum dot enhanced germanium silicide / germanium stannide photoelectric detector obtains high conversion efficiency by utilizing a doping effect introduced by the carbon quantum dots.

Description

technical field [0001] The invention relates to a novel photodetector and a manufacturing method thereof, in particular to a germanium silicide / germanium tin oxide photodetector enhanced by carbon quantum dots and a preparation method thereof, belonging to the technical field of photodetectors. Background technique [0002] Nanomaterials have the characteristics of large specific surface area and electrical properties sensitive to surface adsorption. Applying nanotechnology to the field of sensing is expected to produce sensor devices with fast response, high sensitivity and good selectivity. Semiconducting metal oxides, especially germanium tin oxide-based nanomaterials, have attracted extensive attention due to their superior optical, electrical, and photodetection properties. Studies have shown that doping can further improve the photodetection performance of tin oxide-based nanomaterials. Although tin oxide-based photodetectors have made some achievements, their sensiti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18H01L31/0352
CPCH01L31/035218H01L31/109H01L31/18Y02P70/50
Inventor 庄爱芹
Owner 庄爱芹
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