Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An integrated high-pressure silicon carbide Darlington tube and its manufacturing method

A high-voltage silicon carbide and Darlington tube technology, applied in the field of microelectronics, can solve the problems of small current handling capacity of the drive tube, complicated manufacturing process, and high cost

Active Publication Date: 2019-12-06
XIDIAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] To sum up, the existing silicon carbide Darlington tube has the problem of relatively small current handling capacity of the drive tube and complicated manufacturing process, resulting in relatively high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An integrated high-pressure silicon carbide Darlington tube and its manufacturing method
  • An integrated high-pressure silicon carbide Darlington tube and its manufacturing method
  • An integrated high-pressure silicon carbide Darlington tube and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0090] In step 1, an N+ buffer layer 102 is epitaxially grown on the N+ substrate 101 . Specifically, such as Figure 2A As shown, the N+ substrate 101 is firstly cleaned by RCA standard; and then the front surface of the N+ substrate 101 is epitaxially grown with a thickness of 5 μm and a nitrogen ion doping concentration of 1×10 18 cm -3 N+ buffer layer 102.

[0091] It should be noted that the growth conditions of the N+ buffer layer 102 are as follows: the temperature is 1600° C., the pressure is 100 mbar, the reaction gas includes silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0092] Step 2, epitaxially growing the N− collector region 103 on the N+ buffer layer 102 . Specifically, such as Figure 2B As shown, on the N+ buffer layer 102, the epitaxial growth thickness is 100 μm, and the nitrogen ion doping concentration is 2×10 14 cm -3 N-collector region 103 .

[0093] It should be noted that the growth process c...

Embodiment 3

[0118] In step A, the N+ buffer layer 102 is epitaxially grown on the N+ substrate 101 . Specifically, such as Figure 2A As shown, the N+ type substrate 101 is firstly cleaned by RCA standard; and then the front surface of the N+ substrate 101 is epitaxially grown with a thickness of 6 μm and a nitrogen ion doping concentration of 5×10 18 cm -3 N+ buffer layer 102.

[0119] It should be noted that the growth conditions of the N+ buffer layer 102 are as follows: the temperature is 1600° C., the pressure is 100 mbar, the reaction gas includes silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0120] Step B, epitaxially growing the N- collector region 103 on the N+ buffer layer 102, specifically, as Figure 2B As shown, on the N+ buffer layer 102, the epitaxial growth thickness is 105 μm and the nitrogen ion doping concentration is 6×10 14 cm -3 N-collector region 103 .

[0121] It should be noted that the growth process con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses an integrated type high-voltage silicon carbide Darlington tube and a manufacturing method thereof, and belongs to the technical field of microelectronics. The integrated type high-voltage silicon carbide Darlington tube has the advantages that the current gain of a driving tube is increased, the technology is simple, and the cost is reduced. The integrated type high-voltage silicon carbide Darlington tube comprises an N+ transmission area and an isolation area injection layer, wherein the N+ transmission area is arranged at the upper surface of a base area and comprises a device channel, a device isolation area and a transmission area mesa; the device channel is in an inclined channel shape; the device isolation area is in an inclined channel shape; the transmission area mesa is in a vertical channel shape; the device channel is arranged on the N+ transmission area, and extends to the upper part of an N- collector area; the device isolation area is arranged on the N+ transmission area, and extends to the upper part of the N- collector area; the isolation area injection layer is arranged at the lower surface of the device isolation area, and is positioned in the N- collector area.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to an integrated high-voltage silicon carbide Darlington tube and a manufacturing method thereof. Background technique [0002] With the rapid development of power electronics technology, the demand for high-power semiconductor devices is becoming more and more significant. Due to the limitation of materials, the characteristics of traditional silicon devices have reached its theoretical limit. Silicon carbide is a wide bandgap semiconductor material that has been developed rapidly in the past ten years. It has wide bandgap, high thermal conductivity, and high carrier saturation migration. High efficiency, high power density and other advantages, can be applied to high power, high temperature and radiation resistance and other application fields. Among them, the oxide layer-based MOSFET (English: Metal-Oxide-Semiconductor Field-Effect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/732H01L21/04
CPCH01L29/66068H01L29/732
Inventor 元磊李钊君宋庆文汤晓燕张艺蒙张玉明
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com