Uni-travelling carrier photoelectric detector and manufacturing method thereof

A photodetector, single-row carrier technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of difficult high-speed response, etc., to reduce the space charge effect, reduce thermal power consumption, and small voltage-dependent bandwidth. Effect

Active Publication Date: 2017-05-31
SUZHOU SUNA PHOTOELECTRIC
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Problems solved by technology

For traditional PIN photodetectors, it is difficult to maintain high-speed response

Method used

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  • Uni-travelling carrier photoelectric detector and manufacturing method thereof
  • Uni-travelling carrier photoelectric detector and manufacturing method thereof

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Embodiment Construction

[0031] The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] combine figure 2 As shown, the InGaAs / InAlAs single row carrier photodetector includes: a substrate 1, a buffer layer 2 formed on the substrate 1, a sub-assembly layer 3 formed on the buffer layer 2, and a sub-assembly layer 3 formed on the The etching barrier layer 4, the build-up layer 5 formed on the etch barrier layer 4, the cliff layer 6 formed on the build-up layer 5, the conduction layer 7 formed on the cliff layer 6, the absorption layer 8 forme...

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Abstract

The invention discloses a uni-travelling carrier photoelectric detector and a manufacturing method thereof. The photoelectric detector comprises a substrate, an epitaxial layer and an electrode, and is characterized in that the epitaxial layer comprises an aggregation layer, a cliff layer, a conducting layer, an absorption layer and a barrier layer which are successively superimposed, the absorption layer adopts gradient doped InGaAs, and the barrier layer adopts AlxIn<1-x>As, wherein 0<x<1. According to the invention, the material AlxIn<1-x>As is adopted to act as the barrier layer and the aggregation layer; and the conducting layer InGaAlAs with gradually changing components is adopted to smooth a band gap between InGaAs and InAlAs, so that lattice matching is realized, the dislocation density at a heterogeneous interface is reduced, aggregation of electrons at the heterogeneous interface is prevented, and the drift velocity of the electrons is accelerated. Meanwhile, the doping concentration of the aggregation layer changes in a gradient manner, so that a space charge effect is effectively weakened on the one hand, the thermal power consumption of the device is reduced, and the saturated output current of the device is improved; and one the other hand, a velocity overshoot effect is effectively weakened, and small voltage-dependent bandwidth and better linear response can be acquired.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single row carrier photodetector and a manufacturing method thereof, which can be more effectively applied to technical fields such as optical transmission systems and photon analog-to-digital conversion systems. Background technique [0002] Photodetectors are an indispensable part of optical fiber communication systems and one of the key components that determines the performance of the entire system. In large-capacity ultra-high-speed optical communication systems, people usually consider three important parameters when selecting photodetectors, namely: wide bandwidth, high efficiency and high saturated output power. For traditional PIN photodetectors, it is difficult to maintain high-speed response under high current density conditions due to the limitation of space charge effects. In order to overcome this difficulty, in 1997, T.Ishibashi et al. of NTT Photonics La...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0304H01L31/18
CPCH01L31/03048H01L31/109H01L31/1876Y02P70/50
Inventor 王梦雪杨文献石向阳代盼谭明吴渊渊肖梦袁正兵史后明黄寓洋陆书龙
Owner SUZHOU SUNA PHOTOELECTRIC
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