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Perovskite type strontium niobium nitric oxide semiconductor and preparation method thereof

An oxynitride, perovskite-type technology, applied in niobium compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of literature reports or patents that have not been retrieved for preparation methods, and achieve the suppression of low-valent Nb defects or The effect of impurity formation

Inactive Publication Date: 2017-06-09
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus it is proposed that Sr 4 Nb 2 o 9 As a precursor, the preparation of SrNbO by nitriding 2 N, no literature reports or patents about this preparation method were retrieved

Method used

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  • Perovskite type strontium niobium nitric oxide semiconductor and preparation method thereof
  • Perovskite type strontium niobium nitric oxide semiconductor and preparation method thereof
  • Perovskite type strontium niobium nitric oxide semiconductor and preparation method thereof

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Experimental program
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Embodiment 1

[0018] Sr 4 Nb 2 o 9 It is stored in a corundum boat, sealed in a horizontal tube furnace, and after the air is exhausted, it is fed into NH 3 , keep NH 3 The flow rate is 1.25 standard liters per minute per gram of precursor, the temperature is raised to 900°C at a rate of 5-10°C / min, kept for 15-30 hours, and the temperature is lowered to below 200°C at a rate of 5-50°C / min. The product was washed with 0.01mol / L hydrochloric acid, filtered and washed with water, and dried to obtain SrNbO 2 N. As a comparison, the Sr 2 Nb 2 o 7 and Sr 5Nb 4 o 15 Prepare SrNbO as raw material with the above operation 2 N.

Embodiment 2

[0020] Sr 4 Nb 2 o 9 Lay it on the corundum sand, seal it in the vertical tube furnace, after exhausting the air, pass it into NH 3 , keep NH 3 The flow rate is 2 standard liters per minute per gram of precursor, the temperature is raised to 950°C at a rate of 10°C / min, kept for 30 hours, and the temperature is lowered to below 200°C at a rate of 5-50°C / min. The product was washed with 0.001mol / L hydrochloric acid, filtered and washed with water, and dried to obtain SrNbO 2 N.

Embodiment 3

[0022] Sr 4 Nb 2 o 9 It is stored in a corundum boat, sealed in a horizontal tube furnace, and after the air is exhausted, it is fed into NH 3 , keep NH 3 The flow rate is 0.05 standard liter per minute per gram of precursor, the temperature is raised to 900°C at a rate of 5°C / min, kept for 72 hours, and the temperature is lowered to below 200°C at a rate of 20°C / min. The product was washed with 0.1mol / L hydrochloric acid, filtered and washed with water, and dried to obtain SrNbO 2 N.

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Abstract

The invention relates to a preparation method of a perovskite type strontium niobium nitric oxide semiconductor. The method concretely comprises the following steps of using Sr4Nb2O9 as a single precursor; performing hot ammonolysis nitridation in high-temperature ammonia atmosphere; preparing an SrNbO2N semiconductor with wide visible light effects and the band edge absorption reaching 700nm. In the method, Sr oxides in Sr4Nb2O9 is superfluous through being compared with the Sr-Nb metering ratio in the SrNbO2N; in addition, the atom level uniform distribution in the single precursor is realized; the Nb reduction in the high-temperature nitridation process can be effectively inhibited; the formation of low-valence Nb defects or impurity phases can be inhibited; the high-quality SrNBO2N is obtained. After the nitridation, the excessive Sr is separated out in an oxide form; after the dissolution, pore-forming is performed; the specific surface area of the obtained SrNbO2N is as high as 35.5m<2> / g.

Description

technical field [0001] The invention relates to a perovskite type strontium niobium nitride oxide semiconductor and a preparation method thereof. Background technique [0002] SrNbO 2 N is a metal oxynitride semiconductor with a perovskite crystal structure. Its forbidden band width is 1.8eV, the absorption edge reaches 700nm, and it has a wide range of visible light response (ChemSusChem, 2011, 4, 74-78). SrNbO 2 As a light-absorbing active semiconductor material, N is excited by light to generate electrons and holes, which can be used to drive chemical reactions such as water decomposition (ChemSusChem, 2011, 4, 74-78; J.Am.Chem.Soc., 2011, 133, 12334 -12337; Faraday Discussions, 2014, 176, 213-223). It has very attractive potential applications in the application of photocatalysis, photoelectrocatalysis and other methods for efficient absorption and conversion of solar energy. Traditional preparation of SrNbO 2 N method using Sr 2 Nb 2 o 7 Or a Sr source and Nb s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G33/00
Inventor 杨明辉熊锋强李悦焦雨桐万里鹏
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI