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Method for enhancing electroluminescence of zinc oxide-gallium nitride heterostructure

A heterogeneous structure, zinc oxide technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as the influence of crystal structure and energy band structure on luminous efficiency, improve electroluminescent performance, increase internal quantum efficiency, and solve The effect of low luminous efficiency

Inactive Publication Date: 2017-06-13
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, defects in the crystal structure and energy band structure inevitably have an adverse effect on the luminous efficiency of such heterostructure devices.

Method used

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  • Method for enhancing electroluminescence of zinc oxide-gallium nitride heterostructure
  • Method for enhancing electroluminescence of zinc oxide-gallium nitride heterostructure
  • Method for enhancing electroluminescence of zinc oxide-gallium nitride heterostructure

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Effect test

Embodiment 1

[0029] 1. Select ZnO powder and graphite powder with a purity of 98.00% and mix and grind them for 20 minutes at a mass ratio of 1:1, then place 0.5 g of the ground mixture into an opening at one end, and seal it with a quartz tube with a diameter and length of 3 cm and 30 cm, respectively. end;

[0030] 2. Clean the 0.5cm*1.0cm p-GaN substrate 2 (0001) with acetone, absolute ethanol and deionized water at an ultrasonic frequency of 30KHz for 15min, then dry it with nitrogen, and place it at the open end of the quartz tube , about 3cm away from the nozzle, then place the quartz tube with the powder source and the substrate in a horizontal quartz tube furnace at a temperature of 1050°C; close the tube furnace, turn on the mechanical pump, evacuate to 266Pa, and ventilate with argon and oxygen, the flow rates were 150sccm and 15sccm, respectively, and reacted for 20 minutes; turn off the mechanical pump, ventilate the air to normal pressure, open the tube furnace, take out the s...

Embodiment 2

[0035] 1. Select ZnO powder and graphite powder with a purity of 98.50% and mix and grind them for 20 minutes at a mass ratio of 1:1, then place 0.5 g of the ground mixture into an opening at one end, and seal it with a quartz tube with a diameter and length of 3 cm and 30 cm, respectively. end;

[0036]2. Clean the 0.5cm*1.0cm p‐GaN substrate 2 (0001) with acetone, absolute ethanol and deionized water at an ultrasonic frequency of 60KHz for 10 minutes, and then dry it with nitrogen and place it on a quartz The open end of the tube is about 3 cm away from the tube mouth, and then the quartz tube equipped with the powder source and the substrate is placed in a horizontal quartz tube furnace at a temperature of 950 °C; the tube furnace is closed, the mechanical pump is turned on, and the vacuum is evacuated to 266Pa. Flow argon and oxygen at a flow rate of 130 sccm and 13 sccm respectively, and react for 23 minutes; turn off the mechanical pump, ventilate the air to normal press...

Embodiment 3

[0040] 1. Select ZnO powder and graphite powder with a purity of 99.00% and mix and grind them for 20 minutes at a mass ratio of 1:1, then place 0.5 g of the ground mixture into an opening at one end, and seal it with a quartz tube with a diameter and length of 3 cm and 30 cm, respectively. end;

[0041] 2. Clean the 0.5cm*1.0cm p-GaN substrate 2 (0001) with acetone, absolute ethanol and deionized water at an ultrasonic frequency of 50KHz for 13min, then dry it with nitrogen, and place it at the open end of the quartz tube , about 3cm away from the nozzle, then place the quartz tube with the powder source and the substrate in a horizontal quartz tube furnace at a temperature of 1000°C; close the tube furnace, turn on the mechanical pump, evacuate to 266Pa, and ventilate with argon and oxygen at flow rates of 180 sccm and 18 sccm respectively, and react for 15 minutes; turn off the mechanical pump, ventilate the air to normal pressure, open the tube furnace, take out the sample...

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Abstract

The invention discloses a method for enhancing electroluminescence of a zinc oxide-gallium nitride (ZnO-GaN) heterostructure. By means of a vapor transport method, a zinc oxide nanorod array is prepared on a p type GaN(p-GaN) substrate to construct a n-ZnO-p-GaN heterostructure; by means of a magnetron sputtering method, metal aluminum nanoparticles are modified on the surface of the ZnO nanorod array to form a n-ZnO-p-GaN composite system modified by the aluminum nanoparticles. Due to the local surface plasma effect of the metal aluminum nanoparticles, the spontaneous radiation property of a ZnO nano array is enhanced, and the internal quantum efficiency of the heterostructure is improved. The effective method is provided for constructing high-property photoelectric devices. Meanwhile, a series of problems like low light emitting efficiency caused by mismatching of a lattice structure and an energy band structure of a heterostructure on an interface are solved, and the method has huge potential application in the photoelectric technical field in the future.

Description

technical field [0001] The invention relates to a method for enhancing electroluminescence of a zinc oxide-gallium nitride heterogeneous structure, which belongs to the technical field of semiconductor lighting. Background technique [0002] As a semiconductor material with direct bandgap and wide bandgap, ZnO has an exciton binding energy up to 60meV, which is much higher than GaN's exciton binding energy and thermal ionization energy. Therefore, excitons can exist stably at room temperature. Compared with other semiconductor materials, ZnO is an ultraviolet optoelectronic semiconductor material that is more suitable for use at room temperature or higher temperature. In recent years, the ultraviolet photoelectric properties of ZnO semiconductor materials have attracted the attention of researchers at home and abroad. However, the bottleneck of p-type ZnO (p-ZnO) doping seriously hinders people from designing and fabricating semiconductor laser diodes based on the classical...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/26
CPCH01L33/002H01L33/005H01L33/26
Inventor 徐春祥卢俊峰石增良王悦悦祝秋香
Owner SOUTHEAST UNIV
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