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Carbon nitride/graphene (040) crystal face bismuth vanadate heterojunction and preparation method and application thereof

A face bismuth vanadate, graphene technology, applied in the field of g-C3N4/RGO/crystal face BiVO4 heterojunction and its preparation, can solve the problem of no patent and literature report g-C, no report on composite work, etc. Conducive to effective separation and migration, increased conductivity, and good crystallization

Active Publication Date: 2017-06-23
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, g-C 3 N 4 / RGO / (040) crystal plane BiVO 4 The work on the preparation method of the complex has not been reported, and there are no patents and literature reports g-C 3 N 4 / RGO / (040) crystal plane BiVO 4 Preparation method of the complex

Method used

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  • Carbon nitride/graphene (040) crystal face bismuth vanadate heterojunction and preparation method and application thereof
  • Carbon nitride/graphene (040) crystal face bismuth vanadate heterojunction and preparation method and application thereof
  • Carbon nitride/graphene (040) crystal face bismuth vanadate heterojunction and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 60min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.2mol / L;

[0037] Step 2, Precursor solution A was hydrothermally reacted at 80°C for 15 hours to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 70°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0038] Step 3, the graphene oxide (GO) prepared by the improved Hummers method was dissolved in an aqueous ethanol solution with a volume fraction of 50%, ultrasonically dispersed at 50°C with a power of 100W for 60min, stirred for 10min, and then 1 drop / sec Add 2mol / L HNO at the speed 3 , ultrasonication at 50°C with a power of 100W for 60min, stirring for 10min, then adding 2mol / L NaOH solution at a rate of 1 drop / second, ul...

Embodiment 2

[0045] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.8mol / L HNO at a uniform and slow speed under stirring conditions 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 55min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.18mol / L;

[0046] Step 2, Precursor solution A was hydrothermally reacted at 78°C for 13.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 72°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0047]Step 3, dissolve the prepared graphene oxide (GO) in 40% ethanol aqueous solution by volume fraction, ultrasonically disperse for 72min with a power of 80W at 40°C, stir for 15min, and then add 3mol / LHNO 3 , sonicated at 40°C with a power of 80W for 72min, stirred for 15min, then added 3mol / L NaOH solution at a rate of 2 drops / second, ultrasonicated at 40°C with a power of 80W for 72min, stirred for 15min, an...

Embodiment 3

[0054] Step 1, 6mmoL Bi(NO 3 ) 3 ·5H 2 O dissolves in 1.2mol / L HNO at a uniform and slow speed under stirring 3 solution, stirred for 30min and slowly added 6mmoL NH 4 VO 3 , stirred for 75min to form precursor solution A, Bi in precursor solution A 3+ The concentration is 0.22mol / L;

[0055] Step 2, Precursor solution A was hydrothermally reacted at 82°C for 14.5h to prepare (040) crystal plane BiVO 4 Precipitate, the precipitate was washed with alcohol and water, and then dried at 68°C for 9 hours to obtain (040) crystal plane BiVO 4 Powder;

[0056] Step 3: Dissolve the prepared graphene oxide (GO) in an aqueous ethanol solution with a volume fraction of 45%, ultrasonically disperse it at 45°C with a power of 90W for 75min, stir for 20min, and then add 4mol / LHNO 3 , sonicated at 45°C with a power of 90W for 75min, stirred for 20min, then added 4mol / L NaOH solution at a rate of 3 drops / second, ultrasonicated at 45°C with a power of 90W for 75min, and stirred for 20...

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Abstract

The invention discloses a carbon nitride / graphene (040) crystal face bismuth vanadate heterojunction and a preparation method and an application thereof. The preparation method comprises the following steps: synthesizing (040) crystal face BiVO4 powder through a hydrothermal method; obtaining g-C3N4 powder through a calcining method; then compounding the (040) crystal face BiVO4 powder with GO to obtain RGO / (040) crystal face BiVO4 powder through the hydrothermal method; and finally, compounding the g-C3N4 powder and RGO / (040) crystal face BiVO4 powder through an ultrasonic method to obtain the g-C3N4 / RGO / (040) crystal face BiVO4 heterojunction. The three phases: g-C3N4, RGO and (040) crystal face BiVO4 coexist after being compounded and keep respective growing trends. Heterojunctions are formed among the g-C3N4, RGO and (040) crystal face BiVO4 and are matched in energy level, so that photo-induced electrons and holes are favorably separated. The light response range of the (040) crystal face BiVO4 is increased, and the separating rate of photon-generated carriers is increased, so that the optical catalytic property of the (040) crystal face BiVO4 is improved.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to a g-C 3 N 4 / RGO / (040) crystal plane BiVO 4 Heterojunctions and their preparation methods and applications. Background technique [0002] BiVO 4 It is a photocatalyst with visible light activity. It mainly has three crystal forms: monoclinic scheelite, tetragonal zirconite, and tetragonal scheelite. Among them, the monoclinic phase BiVO 4 The band gap is about 2.4eV, and the catalytic performance is the best. Monoclinic bismuth vanadate has excellent visible light response activity, and its lattice parameters are: a=5.185, b=5.137, c=11.748, and monoclinic BiVO 4 The conduction band is dominated by V 3d , O 2p and Bi 6p It is formed by the hybridization of three orbitals. This electronic structure makes it easy for photogenerated carriers to migrate to the surface of the semiconductor, making it easier for photocatalysts to undergo photocatalytic reactions under visible l...

Claims

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Application Information

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IPC IPC(8): B01J27/24C02F1/30C02F101/38
CPCC02F1/30B01J27/24C02F2305/10C02F2101/38B01J35/39
Inventor 谈国强王颖赵程程任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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