System for anodic oxidation reaction and electrolyte

Abstract

The invention discloses a system for anodic oxidation reaction. The system comprises a reaction container, the reaction container is connected with a constant potential rectifier, and the constant potential rectifier is connected with a computer; electrolyte is contained in the reaction container, a platinum gauze electrode is arranged in the electrolyte and is connected with an auxiliary electrode of the constant potential rectifier, a reference electrode of the constant potential rectifier is soaked in the electrolyte, and a work electrode of the constant potential rectifier is in linkage with a sample. According to the designed system, the constant potential rectifier exerts voltage between the platinum gauze cathode and the anode of the RB-SiC sample to drive hydroxide radical (OH-) in the electrolyte to move to the RB-SiC surface and oxidize the RB-SiC surface, under the driving of voltage, the hydroxide radical (OH-) penetrates through an oxidation layer and moves into RB-SiC interior to continue oxidation, and therefore the thickness of the oxidation layer is continuously increased. The reference electrode monitors the potential change of the region around the oxidation surface and converts the potential change into current data, and therefore oxidation currents in the oxidation region can be monitored in real time.

Description

technical field [0001] The invention belongs to the technical field of anodic oxidation electrolysis, and relates to a system and electrolytic solution for anodic oxidation reaction. Background technique [0002] The research on the application of silicon carbide (SiC) as an optical part began in the 1970s. Due to its high mechanical hardness, strong chemical stability, good thermal stability, high surface quality, high specific stiffness, small thermal deformation coefficient, and small thermal expansion coefficient , good dimensional stability, good optical machinability, good radiation resistance and other advantages, it has been widely used in the field of optics, especially in space optical systems, and its processing technology has become one of the research hotspots in the field of optical mirror processing. According to the preparation process, commonly used SiC materials can be divided into four types: hot press sintered SiC (HP-SiC), atmospheric pressure sintered S...

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Problems solved by technology

It can be seen from the sintering preparation process that RB-SiC contains two phases, SiC and Si. Due to the difference in physical and chemical properties between the SiC phase and the Si phase, it is difficult to directly process RB-SiC to obtain a high-quality surface that meets the requirements of optical applications.

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