Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and preparation method thereof

A nanoparticle modification, nanoparticle technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of not maximizing the improvement of the photoelectrochemical performance of semiconductor thin films, and achieve excellent photoelectrochemical properties. performance, good photoelectrochemical performance, the effect of promoting application

Active Publication Date: 2017-07-11
CHINA JILIANG UNIV
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be noted that the modification of semiconductor thin films reported so far is mostly modified by loading noble metals alone or doped with metal ions alone. This single modification method cannot actually maximize the photoelectrochemical performance of semiconductor thin films.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and preparation method thereof
  • Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and preparation method thereof
  • Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Dissolve 10mmol of bismuth nitrate pentahydrate and neodymium nitrate hexahydrate in 20ml of ethylene glycol at a molar ratio of 0.97:0.03, ultrasonicate for 10 minutes, then add 10ml of glacial acetic acid to continue ultrasonication for 10 minutes, then add 10mmol of ferric nitrate nonahydrate, ultrasonicate For 10 minutes, add an appropriate amount of 1.0 g polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO, commercial name P123) into the solution as a template agent, and place it at room temperature after ultrasonication for 30 minutes Aged for 24 hours to obtain the precursor sol for the next step of preparing Nd-doped BFO (BNFO) thin film; the above-mentioned prepared precursor sol was uniformly spin-coated on the cleaned FTO conductive film at a speed of 1500r / min by a homogenizer. On the glass surface, the spin coating time is 40s, and then dried on a hot table at 150 degrees, and then the dried sample is placed in a muffle furnace for calcina...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of semiconductor films, and particularly relates to an Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and a preparation method thereof. The Au nanoparticle modified Nd-doped BiFeO3 film photoelectrode and the preparation method thereof are characterized in that Au nanoparticles are loaded on the surface of a Nd-doped BFO film through a photoreduction method, and the BFO film is prepared through a sol-gel method, the Nd-doped BFO film is formed by stacking nanoparticles with the particle size being about 300-500 nm, and the Au nanoparticles are evenly distributed on the surface of a Nd-doped BFO film photoelectrode. Through Au nanoparticle modification and Nd doping modification, the light absorption capacity of the BFO film can be improved, migration and separation efficiency of photon-generated carriers are promoted, and the photoelectrochemical properties of the BFO film photoelectrode are greatly improved.

Description

technical field [0001] The invention belongs to the field of semiconductor thin films, in particular to a kind of Au nanoparticle modified Nd-doped BiFeO 3 Thin-film photoelectrode and its preparation method. Background technique [0002] BiFeO 3 (BFO for short) is one of the few multiferroic materials at room temperature, and it has potential applications in data storage, magnetic spin valves, quantum electromagnets, and microelectronic devices. In addition, the BFO film has a large spontaneous polarization phenomenon (100μC / cm 2 ), this spontaneous polarization can cause BFO to generate an internal electric field, which can form a large open circuit voltage and promote the separation of photogenerated electron-hole pairs, showing a photogenerated charge separation mechanism and photovoltaic effect different from traditional semiconductors. In recent years, it has It has attracted extensive attention in the field of photoelectrochemistry. However, the BFO thin film phot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C18/12B82Y30/00
CPCB82Y30/00C01P2002/72C23C18/1254
Inventor 陈达王森黄岳祥秦来顺
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com