Semiconductor device, manufacturing method of the semiconductor device, and electronic device
A technology for semiconductors and devices, applied in the fields of electronic devices, semiconductor devices and preparation methods, can solve the problems of low product yield, unfavorable production costs, device failures, etc., to reduce source-drain contact resistance, save production costs, and avoid circuit failures Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0044] Example 1
[0045] Attached below Figures 1a-1h The manufacturing method of the semiconductor device of the present invention will be further described.
[0046] First, step 101 is performed to provide a semiconductor substrate 1 including a high voltage device region 3 and a low voltage device region 2 on which a patterned high voltage gate oxide layer 5 is formed.
[0047] Specifically, as Figure 1a Said, in this step, the semiconductor substrate 1 may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI), germanium on insulator (GeOI), etc.
[0048] In this embodiment, the material of the semiconductor substrate 1 is preferably silicon.
[0049] The semiconductor substrate 1 includes a high-voltage device region 3 and a low-voltage device region 2, a high-voltage well region and a low-voltage well region are formed in the sem...
Example Embodiment
[0093] Embodiment 2
[0094] The present invention also provides a semiconductor device prepared by the method in Embodiment 1, the device includes a semiconductor substrate 1, and the semiconductor substrate 1 includes a high-voltage device region 3 and a low-voltage device region 2, where the high-voltage device is A patterned high voltage gate oxide layer 5 is formed on the device area.
[0095] The semiconductor substrate 1 may be at least one of the following mentioned materials: silicon, silicon on insulator (SOI), silicon on insulator (SSOI), silicon germanium on insulator (S-SiGeOI), insulator Silicon germanium on germanium (SiGeOI) and germanium on insulator (GeOI) etc.
[0096] In this embodiment, the material of the semiconductor substrate 1 is preferably silicon.
[0097] The semiconductor substrate 1 includes a high-voltage device region 3 and a low-voltage device region 2, a high-voltage well region and a low-voltage well region are formed in the semiconductor ...
Example Embodiment
[0105] Embodiment 3
[0106] An embodiment of the present invention provides an electronic device including the semiconductor device prepared by the method of Embodiment 1.
[0107] The electronic device may be selected from personal computers, game consoles, cellular phones, personal digital assistants, video cameras, digital cameras, etc., but is not limited to the above-listed devices.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap