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A kind of microwave power detector based on spin pumping effect and its preparation method

A technology of microwave power and detectors, which is applied in the direction of electric power measurement by using electromagnetic effect devices, can solve the problems of poor consistency of magnetic tunnel junction devices and complex photolithography process of magnetic tunnel junction devices, and achieve wide test frequency range and structure Simplicity and the effect of reducing production costs

Active Publication Date: 2019-04-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has a high sensitivity, reaching 75400mV / mW, and the volume is also small, but the photolithography process of the magnetic tunnel junction device is complicated. Since the thickness of the tunneling layer is about 1nm, the consistency of the magnetic tunnel junction device is often poor.

Method used

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  • A kind of microwave power detector based on spin pumping effect and its preparation method
  • A kind of microwave power detector based on spin pumping effect and its preparation method
  • A kind of microwave power detector based on spin pumping effect and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0032] Such as figure 1 As shown, the microwave power detector based on the spin pumping effect includes a micro-nanoscale device, and the micro-nanoscale device includes a heterogeneous structure composed of a magnetic thin film layer 1 and a nonmagnetic heavy metal thin film layer 2, and the nonmagnetic heavy metal The thin film layer 2 is grown on the magnetic thin film layer 1;

[0033] The magnetic moment of the magnetic thin film layer of the micro-nanoscale device undergoes ferromagnetic resonance Larmor precession under microwave excitation, and the spin pump generates a spin current that is injected into the non-magnetic heavy metal thin film layer 2, and the inverse During the test of the spin Hall voltage, the integral value of the magnetic field of the inverse spin Hall voltage and the value of the microwave power satisfy a certain linear relationship.

[0034] exist figure 1 Among them, H represents the bias external magnetic field, M represents the microwave en...

Embodiment 2

[0052] The microwave power detector based on the spin pumping effect includes growing non-magnetic heavy metal platinum (Pt) with a nanometer thickness on the magnetic YIG film to obtain a "YIG / Pt" heterostructure, and the micro-nano scale made by photolithography device, testing the inverse spin Hall voltage (V ISHE ), calculate the magnetic field integral value S of the inverse spin Hall voltage.

[0053] Wherein, the thickness of the magnetic YIG thin film ranges from 1 nm to 50 μm, and the thickness of the Pt thin film ranges from 1 nm to 20 nm.

[0054] Its preparation method comprises the following steps:

[0055] Step 1: growing a single crystal yttrium iron garnet (YIG) film on a gadolinium gallium garnet (GGG) single crystal substrate;

[0056] Step 2: Install the magnetic YIG film in step 1 in a vacuum device, and grow a Pt metal film with a nanometer thickness by means of film preparation such as magnetron sputtering to obtain a YIG / Pt heterojunction film;

[005...

Embodiment 3

[0064] The microwave power detector based on the spin pumping effect includes growing non-magnetic heavy metal tantalum (Ta) with a thickness of nanometers on the magnetic YIG film to obtain a "YIG / Ta" heterostructure, and the micro-nano scale made by photolithography device, testing the inverse spin Hall voltage (V ISHE ), calculate the magnetic field integral value S of the inverse spin Hall voltage.

[0065] The thickness range of the magnetic YIG film is 1nm-50μm, and the thickness of the Ta film is 1-20nm.

[0066] Its preparation method comprises the following steps:

[0067] Step 1: growing a single crystal yttrium iron garnet (YIG) film on a gadolinium gallium garnet (GGG) single crystal substrate;

[0068] Step 2: Install the magnetic YIG film in step 1 in a vacuum device, and grow a Ta metal film with a nanometer thickness by means of film preparation such as magnetron sputtering to obtain a YIG / Ta heterojunction film;

[0069] Step 3: Use standard microelectronic...

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Abstract

The invention relates to the technical field of microwave electronic equipment, and provides a microwave power detector based on the spin pumping effect and a preparation method thereof. The microwave power detector based on the spin pumping effect includes a micro-nano scale device, and the micro-nano scale The device includes a heterogeneous structure composed of a magnetic thin film layer and a nonmagnetic heavy metal thin film layer. The nonmagnetic heavy metal thin film layer is grown on the magnetic thin film layer; the magnetic moment of the magnetic thin film layer of the micro-nano scale device undergoes ferromagnetic resonance under microwave excitation. Larmor precession, the spin pump generates spin current and injects it into the non-magnetic heavy metal thin film layer. During the test of the inverse spin Hall voltage, the magnetic field integral value of the inverse spin Hall voltage and the value of the microwave power Satisfying a certain linear relationship, the detector has a simple structure, reduces the manufacturing cost of the detector, has a wide range of testing frequencies, high linearity of testing microwave power, and a wide range of applications.

Description

technical field [0001] The invention relates to the technical field of microwave electronic equipment, in particular to a microwave power detector based on a spin pumping effect and a preparation method thereof. Background technique [0002] With the rapid development of wireless communication technology and applications, environmental electromagnetic waves are becoming more and more complex, and the impact on the human body and the environment is becoming more and more prominent. Inexpensive and effective microwave power detectors are needed to detect environmental electromagnetic waves. In addition, in some applications such as radar imaging and radar speed measurement, microwave power detectors have also become indispensable core components, and the number of applications is extremely large. [0003] Traditional microwave detectors are based on semiconductor Schottky diode devices, and the range of frequency and power for detecting microwaves is not large enough. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R21/08
CPCG01R21/08
Inventor 金立川张怀武饶毅恒钟智勇唐晓莉杨青慧文岐业李颉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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