Algan/gan ultraviolet detector based on oblique zno nanowire array modulation and its preparation method

Abstract

The invention provides an AlGaN / GaN ultraviolet detector based on oblique ZnO nanowire array modulation, including a gateless AlGaN / GaN high electron mobility transistor and an oblique ZnO nanowire array grown in a gate region of the gateless AlGaN / GaN high electron mobility transistor. A GaN epitaxial layer in the gateless AlGaN / GaN high electron mobility transistor is a GaN layer of a semi-polar surface (11-22). The GaN epitaxial layer includes a GaN buffer layer, a GaN channel layer and a GaN cap layer. The GaN channel layer is located on an upper surface of the GaN buffer layer. The plane included angle between the oblique ZnO nanowire array and the gate region is between 30 and 35 DEG. Through obliquely growing the ZnO nanowire array in the gate region of the gateless AlGaN / GaN high electron mobility transistor, the detection efficiency of the detector is improved, and real-time, accurate and efficient detection of ultraviolet light intensity is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlGaN / GaN ultraviolet detector based on oblique ZnO nanowire array modulation and a preparation method thereof. Background technique [0002] Ultraviolet light has a non-negligible impact on both the ecosystem and human beings, which requires real-time and accurate monitoring of ultraviolet light. In the rapidly developing information age, multi-node detection in the emerging Internet of Things technology has an increasing demand for ultraviolet detectors, and higher and higher requirements are placed on the sensitivity and miniaturization of devices. [0003] ZnO is a direct bandgap semiconductor with a bandgap width of 3.37eV. It has high exciton binding energy and is an excellent material for ultraviolet detectors. At present, ZnO materials applied to ultraviolet detectors include ZnO thin films, single ZnO nanowires, and vertical ZnO nanowire arrays. [0004] The ...

AI Technical Summary

Problems solved by technology

Conventional AlGaN / GaN HEMT devices use epitaxial layers and GaN polar planes, and the mismatch between the ZnO lattice structure and GaN is small. However, whether depositing a ZnO seed layer on the gate or directly growing ZnO on the gate Growth of ZnO nanowire arrays perpendicular to the gate plane; and the 2DEG (two-dimensional electron gas) generated at the AlGaN / GaN heterojunction interface on the polar plane is due to the GaN polarization effect, and the polar plane will bring Sta The gram effect makes it difficult to deplete 2DEG, which affects the regulation of ZnO nanowires on the concentration of 2DEG, and then affects the sensitivity to ultraviolet light detection.

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