A kind of preparation method of large-grain iodide perovskite film

A technology of iodide and perovskite, which is applied in the field of preparation of large-grain iodide perovskite thin films, can solve the problems of small grain size and poor grain uniformity of perovskite thin films, and achieve large grain size , The film thickness is easy to control, and the effect of film coverage is good

Inactive Publication Date: 2019-04-16
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] Aiming at the disadvantages of poor grain uniformity and too small grain size in the perovskite thin film prepared by the existing method, the invention provides a method for preparing a large grain iodide perovskite thin film. Ultrasonic the raw materials to disperse the raw materials into very small particles and then fully react, and finally grind to obtain micron-sized large grains and high-quality perovskite films

Method used

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  • A kind of preparation method of large-grain iodide perovskite film
  • A kind of preparation method of large-grain iodide perovskite film
  • A kind of preparation method of large-grain iodide perovskite film

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Embodiment 1

[0023] (1) CH 3 NH 3 I and PbI 2 After equimolar amounts were mixed, methanol was added, and the reaction was ultrasonically treated for 30 minutes to obtain a yellow precipitate of methylamine lead iodide. Remove the supernatant, heat the yellow precipitate at 100-120°C to remove excess methanol, and grind the dry powder under nitrogen protection to obtain methylamine lead iodide perovskite particles, which are dispersed in pine In oleyl alcohol, a precursor solution with a concentration of 1 mol / L was obtained.

[0024] (2) Spin-coat the dense layer and the porous layer on the surface of the cleaned FTO glass sheet respectively. The spin-coating conditions are 10s at a low speed of 1000rpm, then 40s at a high speed of 5000rpm, and then annealing treatment. The treatment temperature is 100°C and the time is 1h. .

[0025] (3) Spin-coat the precursor solution onto the FTO glass substrate layer. The spin-coating conditions are 10s at a low speed of 1000rpm, 35s at a high sp...

Embodiment 2

[0027] (1) CH 3 NH 3 I and PbI 2 After equimolar amounts were mixed, methanol was added, and the reaction was ultrasonically treated for 30 minutes to obtain a yellow precipitate of methylamine lead iodide. Remove the supernatant, heat the yellow precipitate at 100-120°C to remove excess methanol, and grind the dry powder under nitrogen protection to obtain methylamine lead iodide perovskite particles, which are dispersed in pine In oleyl alcohol, a precursor solution with a concentration of 1 mol / L was obtained.

[0028] (2) Spin-coat the dense layer and the porous layer on the cleaned FTO glass surface respectively. The spin-coating conditions are 10s at a low speed of 1000rpm, then 40s at a high speed of 5000rpm, and then annealed at a temperature of 100°C for 1h.

[0029] (3) Spin-coat the precursor solution onto the FTO glass substrate layer. The spin-coating condition is 10s at a low speed of 1000rpm, 35s at a high speed of 6000rpm, and then annealed at 120°C to remov...

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Abstract

The invention discloses a preparation method of a large grain iodide perovskite thin film. In the method, methylamine iodide and iodide powder are added to methanol for ultrasonication, so that the raw materials are dispersed into very small particles and then fully reacted, and finally a micron-scale large grain and high-quality perovskite film are obtained by grinding . The perovskite film prepared by the method of the present invention has good grain size uniformity, good film coverage, easy control of film thickness, large grain size, which can reach micron level, and large grains can effectively reduce grain boundary density. Increase the carrier transport rate. The cell efficiency prepared by the thin film of the present invention rises from 7.79% to 10.13%, which is 2% higher than that of the traditional method.

Description

technical field [0001] The invention belongs to the field of photoelectric device preparation, and relates to a preparation method of a large-grain iodide perovskite thin film. Background technique [0002] ABI 3 Type iodide materials have excellent optical properties such as long carrier lifetime, low electron-hole recombination probability, low exciton binding energy, wide absorption spectrum and large light absorption coefficient, and are widely used in solar cells. Perovskite solar cells use perovskite materials as the light-absorbing layer of the cell. The efficiency of perovskite solar cells ranged from 3.8% in 2009 to 22% in 2016. In just a few years, the photoelectric conversion of the cell Efficiency has been developed rapidly, and the efficiency is close to that of monocrystalline solar cells, so it has received extensive attention. [0003] Among the perovskite light-absorbing materials, methylamine lead iodide (CH 3 NH 3 PB 3 ) materials, there are usually t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/10Y02E10/549
Inventor 白帆张树芳苗晓亮邱婷胡延强严仲
Owner NANJING UNIV OF SCI & TECH
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