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Composition for forming silicon-containing resist underlayer film removable by wet process

A technology of resist lower layer and composition, applied in the direction of coating, photoengraving process of pattern surface, photosensitive material for opto-mechanical equipment, etc., can solve problems such as substrate damage

Active Publication Date: 2017-08-18
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this removal method also brings great damage to the substrate

Method used

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  • Composition for forming silicon-containing resist underlayer film removable by wet process
  • Composition for forming silicon-containing resist underlayer film removable by wet process
  • Composition for forming silicon-containing resist underlayer film removable by wet process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0186] (Synthesis of 4-(trimethoxysilyl)benzyl acetate)

[0187]

[0188] 30.0 g of sodium acetate and 150.0 g of N-methylpyrrolidone (hereinafter also referred to as NMP) were added to a 300 mL three-necked flask equipped with an electromagnetic stirrer, and heated to 130° C. in an oil bath. There, 90.25 g of (p-chloromethyl)phenyltrimethoxysilane was added dropwise, followed by heating and stirring for 4 hours. The obtained solution was returned to room temperature, transferred to a separatory funnel, 300 g of toluene and 90 g of water were added, and the organic layer was washed. After washing was repeated three times, magnesium sulfate was added to the organic layer, dried, filtered, and the solvent was evaporated to obtain a crude product. Then, purification was carried out by distillation under reduced pressure to obtain 60 g of 4-(trimethoxysilyl)benzyl acetate as the target substance.

[0189] 1 H-NMR (500MHz, DMSO-d 6 ): 2.08ppm (s, 3H), 3.54ppm (s, 9H), 5.10pp...

Synthetic example 1

[0191] In a 500mL four-necked flask equipped with a stirrer, a reflux condenser, a dropping funnel and a thermometer, 75g of water was added, and 50g of 4-methoxybenzyltrimethoxysilane was added dropwise at a reaction temperature of 20°C (in all silanes, 100mol%) of toluene 75g solution. After completion of the dropwise addition, the reaction was carried out at the same temperature for 2 hours, and liquid separation was carried out after standing still to recover the oil layer. Next, washing was performed with a 5% aqueous sodium bicarbonate solution. Next, this toluene solution was transferred to a 500 mL four-necked flask equipped with a stirrer, a distillation tower, a cooler, and a thermometer, put into an oil bath, and heated slowly to distill off toluene. After toluene was distilled off, the temperature was further increased, and aging was carried out at 200° C. for 2 hours. Then, it was transferred to a 300mL four-necked flask equipped with a stirrer, a reflux condens...

Synthetic example 2

[0193] In a 500mL four-necked flask equipped with a stirrer, a reflux condenser, a dropping funnel and a thermometer, 74g of water was added, and 36.3g of 4-methoxybenzyltrimethoxysilane (in all silanes) was added dropwise at a reaction temperature of 20°C. 70 mol%) and 12.7 g of phenyltrimethoxysilane (30 mol% in all silanes) in 74 g of toluene. After completion of the dropwise addition, the reaction was carried out at the same temperature for 2 hours, and liquid separation was carried out after standing still to recover the oil layer. Next, washing was performed with a 5% aqueous sodium bicarbonate solution. Next, this toluene solution was transferred to a 500 mL four-necked flask equipped with a stirrer, a distillation tower, a cooler, and a thermometer, and placed in an oil bath, and heated slowly to distill off toluene. After toluene was distilled off, the temperature was further increased, and aging was carried out at 200° C. for 2 hours. Then, it was transferred to a ...

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Abstract

The subject of the invention is to provide a resist underlayer film formation composition for forming a resist underlayer film which can be used as a hard mask and is removable by a wet etching method using a liquid chemical such as sulfuric acid / hydrogen peroxide. The resist underlayer film formation composition for lithography is characterized by comprising ingredient (A) and ingredient (B), wherein the ingredient (A) comprises one or more hydrolyzable silanes, a hydrolyzate thereof, or a product of hydrolysis / condensation thereof, the hydrolyzable silanes comprising a hydrolyzable silane represented by formula (1): [Chemical formula 1] formula (1) [in formula (1), R1 represents an organic group represented by formula (2) [Chemical formula 2] formula (2) and has been bonded to the silicon atom by an Si-C bond, R3 represents an alkoxy group, acyloxy group, or halogen radical, symbol a is an integer of 1, b is an integer of 0-2, and a+b is an integer of 1-3], and the ingredient (B) is a crosslinking compound including a ring structure having an alkoxymethyl or hydroxymethyl group or a crosslinking compound having an epoxy or blocked-isocyanate group.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film for lithography used for forming an underlayer film used as an underlayer of a photoresist in a photolithography process for manufacturing a semiconductor device. Background technique [0002] As an underlayer film between the semiconductor substrate and the photoresist, a film known as a hard mask containing metal elements such as silicon and titanium is used (see Patent Document 1 and Patent Document 2). In this case, since the composition of the resist and the hard mask are largely different, their removal rates by dry etching largely depend on the type of gas used for dry etching. Furthermore, by appropriately selecting the type of gas, the hard mask can be removed by dry etching without accompanying a significant decrease in the film thickness of the photoresist. Thus, in the manufacture of semiconductor devices in recent years, a resist underlayer film has been d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11H01L21/027
CPCC09D4/00C09D183/06C08G77/14G03F7/091G03F7/0752G03F7/0757G03F7/11H01L21/027C09D183/02C09D183/04G03F7/2004G03F7/38G03F7/40H01L21/02123H01L21/311
Inventor 若山浩之中岛诚柴山亘远藤雅久
Owner NISSAN CHEM IND LTD