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A kind of hosrmnni co-doped bismuth ferrite multiferroic thin film and preparation method thereof

A technology of multiferroic thin film and bismuth ferrite, which is applied in the direction of coating, etc., to achieve the effect of improving ferromagnetism, easy control of doping amount, and precise and controllable chemical composition

Active Publication Date: 2020-05-05
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, there is no information about Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.97-x mn 0.03 Ni x o 3 Related reports on multiferroic thin films and their preparation methods

Method used

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  • A kind of hosrmnni co-doped bismuth ferrite multiferroic thin film and preparation method thereof
  • A kind of hosrmnni co-doped bismuth ferrite multiferroic thin film and preparation method thereof
  • A kind of hosrmnni co-doped bismuth ferrite multiferroic thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029]Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.96:0.03:0.01 (x=0.01 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that the total concentration of metal ions is 0.2mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 2.5:1;

[0030] Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the sur...

Embodiment 2

[0033] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 (x=0.02 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.3mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0034] Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the surface of t...

Embodiment 3

[0044] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and nickel acetate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.94:0.03:0.03 (x=0.03 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.4mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3.5:1;

[0045] Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the surface of t...

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Abstract

The invention provides a HoSrMnNi co-doped bismuth ferrite multiferroic film and a preparation method thereof. According to the invention, bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and nickel acetate are used as raw materials (wherein bismuth nitrate is 5% excess in amount), ethylene glycol monomethyl ether and acetic anhydride are used as solvents, and a spin-coating process and a layer-upon-layer annealing process are employed to prepare a Bi<0.89>Ho<0.08>Sr<0.03>Fe<0.97-x>Mn<0.03>Ni<x>O<3> multiferroic film, i.e., the HoSrMnNi co-doped bismuth ferrite multiferroic film. According to the invention, a sol-gel process is employed, and spin-coating and layer-upon-layer annealing methods are utilized; requirements on equipment are simple; experimental conditions are easy to realize; the preparation method is suitable for preparation of films on large surfaces and surfaces with irregular shapes and allows chemical components to be accurate and controllable; and the prepared HoSrMnNi co-doped bismuth ferrite multiferroic film has good uniformity and improves the multiferroic performance of a BiFeO3 film.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of a HoSrMnNi co-doped bismuth ferrite multiferroic film on the surface of a functionalized FTO / glass substrate, specifically Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.97-x mn 0.03 Ni x o 3 Multiferroic thin film, x=0.01~0.04. Background technique [0002] Multiferroic materials refer to materials that simultaneously possess two or more properties of ferroelectricity, ferromagnetism and ferroelasticity within a certain temperature range. Among many multiferroic materials, bismuth ferrite (BiFeO 3 ) is a ferroelectric Curie temperature (T C =1103K) and antiferromagnetic ordering temperature (Nell temperature, T N =643K) single-phase multiferroic materials above room temperature, BiFeO 3 The coexistence of ferroelectricity and ferromagnetism makes BiFeO 3 There are potential applications in magnetoelectric storage, spintronics and other fields, so BiFeO 3 received e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34C04B35/40C04B35/622
CPCC03C17/3417C03C2217/94C03C2218/116C03C2218/32C04B35/2633C04B35/2641C04B35/2658C04B35/2666C04B35/62222C04B2235/656C04B2235/768
Inventor 谈国强郭美佑杨玮刘云任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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