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Selenizing method for copper-zinc-tin-sulfur thin film

A copper-zinc-tin-sulfur and selenization technology, applied in photovoltaic power generation, sustainable manufacturing/processing, electrical components, etc., to achieve the effects of improving flatness, repairing cracks, and high device efficiency

Inactive Publication Date: 2017-08-25
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the deficiencies of the existing graphite box semi-closed selenization process technology, and provides a process for selenizing the copper-zinc-tin-sulfur film itself by utilizing the selenium film prefabricated on the surface of the copper-zinc-tin-sulfur film

Method used

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  • Selenizing method for copper-zinc-tin-sulfur thin film

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Embodiment 1

[0039] This embodiment provides a process for selenizing the copper-zinc-tin-sulfur thin film itself by using a prefabricated selenium film on the surface of the copper-zinc-tin-sulfur thin film. The selected substrate is a copper-zinc-tin-sulfur precursor film prepared by a solution spin coating method. The operation steps of this process are:

[0040] 1) Mix selenium powder and ethylenedithiol-ethylenediamine mixed solution in a sealed serum bottle, the volume ratio of ethanedithiol and ethylenediamine is 1:4; In the glove box, the mixture was stirred at 45°C for 60 min to obtain a selenium sol with a concentration of 0.15 g / mL

[0041] 2) if figure 1As shown; set the spin coater at 500rpm low speed for 10s and 2000rpm high speed for 15s, set the temperature of the glue baking machine at 250°C, place the copper zinc tin sulfur precursor film on the spin coater sheet support, drop on the surface Two drops of selenium sol are spin-coated, and after spin-coating, the sample i...

Embodiment 2

[0044] This embodiment provides a method for preparing a copper-zinc-tin-sulfur film substrate. Molybdenum glass is selected, soaked in a mixed solution of ethanol and deionized water, ultrasonically cleaned, and dried with compressed cold air for use.

[0045] Mix cuprous sulfide, tin disulfide and zinc oxide with the ethanedithiol-ethylenediamine mixed solution in a sealed serum bottle, and stir the mixture at 45°C for 8 hours in a low-humidity glove box filled with inert gas , to obtain the copper-zinc-tin-sulfur precursor solution; set the spin coater at a low speed of 500rpm for 10s and a high speed of 3000rpm for 15s, set the temperature of the baking machine to 320°C, and place the copper, zinc, tin-sulfur precursor on the spin coater For the thin film, two drops of copper-zinc-tin-sulfur precursor solution are added to the surface for spin coating, and after spin coating, the sample is placed in a glue baking machine for heat treatment. The process is repeated 3 times t...

Embodiment 3

[0048] This embodiment provides a process for prefabricating a selenium film on the surface of a copper-zinc-tin-sulfur film, and the selected substrate is a copper-zinc-tin-sulfur precursor film prepared by a solution spin coating method.

[0049] Mix a certain amount of selenium powder and ethanedithiol-ethylenediamine mixed solution in a sealed serum bottle, and in a low-humidity glove box filled with inert gas, stir the mixed solution at 45°C for 60min to obtain a concentration of 0.15g / mL of selenium sol, such as figure 1 As shown; set the spin coater at 500rpm at low speed for 10s and at 1800rpm at high speed for 15s, set the temperature of the glue baker at 250°C, place a copper-zinc-tin-sulfur precursor film on the spin coater, and drop Two drops of selenium sol are spin-coated, and after spin-coating, the sample is placed in a glue baking machine for heat treatment. This process is cycled 3 times to obtain a copper-zinc-tin-sulfur-selenium precursor film of a prefabr...

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Abstract

The invention discloses a selenizing method for a copper-zinc-tin-sulfur thin film, and relates to the technical field of a semiconductor optoelectronic material. The method comprises the following steps of 1) dissolving selenium powder with a mixture of ethanedithiol and ethylenediamine as a solvent to prepare selenium sol, and controlling the mass concentration of the selenium powder in the selenium sol to be 0.15 to 0.18g / mL; 2) preparing a selenium thin film on the upper surface of a copper-zinc-tin-sulfur precursor thin film by spin coating-baking; and 3) selenizing the copper-zinc-tin-sulfur precursor thin film in a direct rapid annealing process to prepare a large-grained copper-zinc-tin-sulfur-selenium thin film fulfilling the requirement of a copper-zinc-tin-sulfur selenium solar cell absorption layer. Compared with a quick selenizing process generally using an external selenium source, the selenizing method of invention can promote the internal diffusion of a selenium source to the copper-zinc-tin-sulfur thin film during the selenization process and reduce the amount of selenium powder used in the process of thin film selenization, and can prepare the large-grained copper-zinc-tin-sulfur-selenium thin film fulfilling the requirement of the copper-zinc-tin-sulfur-selenium solar cell absorption layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials, and in particular relates to a selenization method of a copper-zinc-tin-sulfur film, in particular to a method for selenizing the copper-zinc-tin-sulfur film itself by using a selenium film prefabricated on the surface of the copper-zinc-tin-sulfur film Methods. Background technique [0002] In recent years, due to the excessive consumption of energy and the gradual increase of environmental pollution, the utilization and development of renewable energy has become more and more urgent. This is a major challenge that mankind is facing, and it has also brought new energy technologies Huge opportunity. Among them, solar cells, as a device that can convert solar energy into electrical energy, have become one of the most potential competitors in the field of renewable energy conversion and utilization. At present, thin-film solar cells have become the mainstream of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0327H01L31/1864Y02E10/50Y02P70/50
Inventor 袁晓杰张军彭峰
Owner SOUTH CHINA UNIV OF TECH
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