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Preparation method of tin selenide photovoltaic film

A photovoltaic thin film, tin selenide technology, applied in coatings, electrical components, circuits, etc., can solve the problems of complex process routes and high preparation costs, achieve low equipment requirements, low production costs, good continuity and uniformity Effect

Inactive Publication Date: 2017-08-29
济南领飞电气设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low cost of raw materials, it is a very promising photovoltaic thin film material, but the existing process route is complicated and the production cost is high, so it is also necessary to explore a low-cost preparation process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] a. Cleaning of the substrate: Clean the silicon substrate as described above, with a size of 2cm×2cm.

[0029] b. Add 2.036 parts of SnCl 2 2H 2 O and 1.0 parts SeO 2 Put it into a glass bottle, add 54.545 parts of ethanol, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0030] c. Drop the above solution onto the silicon substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds, and at 1000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is uniform, the substrate is dried at 100°C, and then the aforementioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 8 times, and a precursor thin film sample with a certain thickness is obtained on the substrate.

[0031] d. Put the precursor film sample obtained by the above process into a sealable container, and put 18.182 parts of hydrazine h...

Embodiment 2

[0034] a. Cleaning of the substrate: Clean the silicon substrate as described above, with a size of 2cm×2cm.

[0035] b. Add 2.036 parts of SnCl 2 2H 2 O and 1.0 parts SeO 2 Put it into a glass bottle, add 54.545 parts of ethanol, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0036]c. Drop the above solution onto the silicon substrate placed on the homogenizer, then start the homogenizer, rotate the homogenizer at 200 rpm for 5 seconds, and rotate at 3000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is uniform, the substrate is dried at 100°C, and then the aforementioned solution is dripped and spin-coated again, and then dried again. This is repeated 8 times, and a precursor thin film sample with a certain thickness is obtained on the silicon substrate.

[0037] d. Put the precursor film sample obtained by the above process into a sealable container, and put 18.182 parts of hydrazi...

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Abstract

The invention provides a preparation method of a tin selenide photovoltaic film, and belongs to the technical field of photovoltaic film preparation. The tin selenide photovoltaic film is obtained through the following steps that firstly a substrate is cleaned, then SnCl2.2H2O and SeO2 are put in a solvent, a precursor film is obtained on the substrate by using a spin coating method, the precursor film is dried and put in a closed container having hydrazine hydrate so that the precursor film sample is enabled not to be contacted with the hydrazine hydrate, the closed container in which the precursor film sample is arranged is heated, and the sample is taken out to be cooled and dried so that the tin selenide photovoltaic film can be obtained. The preparation method does not require the high temperature and high vacuum condition and has low requirement for instruments and equipment so that the production cost is low, the production efficiency is high and operation is easy. The obtained tin selenide photovoltaic film has great continuity and uniformity, and the new process is easy to control the component and the structure of the target product so that the low-cost and industrialized production method can be provided for preparing the high-performance tin selenide photovoltaic film.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic thin film preparation, and in particular relates to a preparation method of tin selenide photovoltaic thin film. Background technique [0002] With the development of society and economy, my country's total energy consumption has increased sharply, and energy shortages and pollution caused by energy consumption have become prominent problems in domestic social development. Harmonious society is of great significance. In order to make full use of solar energy, which is a clean, safe and environmentally friendly renewable resource, the research and development of optoelectronic materials has been paid more and more attention in recent years. [0003] SnSe is an important IV-VI semiconductor with an indirect bandgap of 0.90eV and a direct bandgap of 1.30eV, which can absorb most of the solar spectrum. As an abundant, environmentally friendly and chemically stable semiconductor material, tin sel...

Claims

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Application Information

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IPC IPC(8): H01L31/032C03C17/22
CPCH01L31/0324C03C17/22C03C2217/289
Inventor 刘科高刘振国许超
Owner 济南领飞电气设备有限公司
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