Method for efficiently cutting silicon slice by electroplated diamond wires

A diamond wire and silicon wafer technology, applied in the field of high-efficiency cutting of silicon wafers with electroplating diamond wire, can solve the problems of low efficiency of cutting silicon wafers, achieve the effects of reducing cutting time, reducing production costs, and increasing production capacity

Active Publication Date: 2017-09-01
杨凌美畅新材料股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problem of low efficiency in cutting silicon wafers with electroplated diamond wires in the prio

Method used

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  • Method for efficiently cutting silicon slice by electroplated diamond wires
  • Method for efficiently cutting silicon slice by electroplated diamond wires
  • Method for efficiently cutting silicon slice by electroplated diamond wires

Examples

Experimental program
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Embodiment 1

[0048] Table 1 Example 1 cutting experiment data

[0049]

Embodiment 2

[0051] The difference with embodiment 1 is:

[0052] Step (2) Mix the purchased high-tech cutting fluid, Defeng defoamer, and water according to the mass ratio of 1:1:300, pour it into the cutting fluid tank, and set aside.

[0053] Such as image 3 As shown, it is an electron micrograph of the electroplated diamond wire used in this embodiment. In this embodiment, the electroplated diamond wire with a diameter of 70um is used as the cutting line, and the diamond particle density on the electroplated diamond wire is 300 ± 20 / mm , The diameter of the diamond particles is 8±2um, and the height of the diamond particles is 4.5um.

[0054] Before cutting, set the cutting depth to 6mm, and adjust the coolant flow rate to 0.5L / min. When the cutting depth reaches 6mm, the coolant flow rate is 160L / min.

[0055] During the cutting process, the cutting tension of the electroplated diamond wire is 12N, the line speed of the electroplated diamond wire is 1400m / min, the feed cutting spee...

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Abstract

The invention provides a method for efficiently cutting a silicon slice by electroplated diamond wires. The method comprises the following steps of (1) gluing a rod; (2) performing feeding; (3) compounding cutting liquid; (4) performing cutting, wherein the cutting is realized in a manner that a silicon rod is driven by a cutting machine frame to move towards an electroplated diamond wire net and at the same time, the electroplated diamond wire net is driven by a main roll to be in reciprocating motion, the density of diamond grains on the electroplated diamond wires is 200-350 grains/mm, in the cutting process, the cutting tension of the electroplated diamond wires is 6-16N, the linear speed of the electroplated diamond wires is 1200-1800m/min, the cutting speed of a work piece is 0.8-3.5 mm/min, the temperature of cutting liquid is 18-23 DEG C, and in the cutting process, the electroplated diamond wires adopt a gradual progressive method or a manner of performing supplying in a reverse direction first and then performing supplying in a forward direction; (5) performing blanking; (6) performing ungluing, and performing washing; and (7) performing detecting and packaging. Through the cutting method disclosed by the invention, the smooth cutting of the crystalline silicon rod of 8.4inch and 650-700mm can be completed in two hours.

Description

technical field [0001] The invention relates to a method for multi-wire cutting solar-grade silicon wafers, in particular to a method for efficiently cutting silicon wafers with electroplated diamond wires. Background technique [0002] Solar energy is a renewable clean energy, and its application fields are becoming more and more extensive. Photovoltaic power generation is one of the most important fields. According to the principle of photovoltaic effect, solar cells are used to directly convert solar energy into electrical energy. Silicon wafers are an important part of solar cells. At present, almost all silicon wafer preparation processes use a multi-wire cutting method to cut crystalline silicon rods into silicon wafers of required thickness. Multi-wire cutting is mainly composed of two major cuttings: (1) Free abrasive cutting, that is, using thin wire steel wire to drive SiC slurry with a diameter of 8-20um to realize grinding and cutting of crystalline silicon, also...

Claims

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Application Information

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IPC IPC(8): B28D5/04B24B27/06
CPCB24B27/0633B28D5/045
Inventor 曲东升王新平曹民博
Owner 杨凌美畅新材料股份有限公司
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