Preparation method of honeycomb-shaped porous bismuth oxide

A bismuth oxide and honeycomb technology, which is applied in the field of semiconductor functional material preparation, can solve the problems of failure, reduced catalytic activity of bismuth oxide, low specific surface area, etc., and achieves the effect of increasing porosity

Inactive Publication Date: 2017-09-26
薛向东
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem mainly solved by the present invention is: the bismuth oxide prepared by the traditional method has low porosity and low specific surface area, and the pores are easily blocked by reactants during use, which leads to a decrease in the catalytic activity of bismuth oxide or even failure. Provided is a preparation method of honeycomb porous bismuth oxide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of honeycomb-shaped porous bismuth oxide

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0024] According to the mass ratio of 1:10, pour bismuth nitrate pentahydrate and dilute nitric acid solution with a mass fraction of 6% into a beaker, stir and mix with a glass rod until the bismuth nitrate pentahydrate is completely dissolved to obtain a bismuth nitrate solution; then the volume ratio is 5:1 Measure the obtained bismuth nitrate solution and 15% urea solution, first pour the bismuth nitrate solution into a three-necked flask, and then move the three-necked flask into an ice-water bath with a temperature of 0°C, and use a magnetic stirrer at 400r / min Stir at a rotating speed, and in the low-temperature stirring state, drop the urea solution into the three-necked flask through the dropping funnel, and adjust the dropping rate of the urea solution to 8mL / min. , and wash the filter residue with deionized water for 5 times, then transfer the washed filter residue to a vacuum freeze-drying box, and freeze-dry it in a vacuum for 8 hours at a temperature of -50°C to o...

example 2

[0026]According to the mass ratio of 1:10, pour bismuth nitrate pentahydrate and dilute nitric acid solution with a mass fraction of 6% into a beaker, stir and mix with a glass rod until the bismuth nitrate pentahydrate is completely dissolved to obtain a bismuth nitrate solution; then the volume ratio is 5:1 Measure the obtained bismuth nitrate solution and 15% urea solution, first pour the bismuth nitrate solution into a three-necked flask, and then move the three-necked flask into an ice-water bath with a temperature of 0°C, and use a magnetic stirrer at 400r / min Stir at a rotating speed, and in the low-temperature stirring state, drop the urea solution into the three-necked flask through the dropping funnel, and adjust the dropping rate of the urea solution to 8mL / min. , and wash the filter residue with deionized water for 5 times, then transfer the washed filter residue to a vacuum freeze-drying oven, and freeze-dry it in a vacuum for 8 hours at a temperature of -50°C to o...

example 3

[0028] According to the mass ratio of 1:10, pour bismuth nitrate pentahydrate and dilute nitric acid solution with a mass fraction of 6% into a beaker, stir and mix with a glass rod until the bismuth nitrate pentahydrate is completely dissolved to obtain a bismuth nitrate solution; then the volume ratio is 5:1 Measure the obtained bismuth nitrate solution and 15% urea solution, first pour the bismuth nitrate solution into a three-necked flask, and then move the three-necked flask into an ice-water bath with a temperature of 0°C, and use a magnetic stirrer at 400r / min Stir at a rotating speed, and in the low-temperature stirring state, drop the urea solution into the three-necked flask through the dropping funnel, and adjust the dropping rate of the urea solution to 8mL / min. , and wash the filter residue with deionized water for 5 times, then transfer the washed filter residue to a vacuum freeze-drying box, and freeze-dry it in a vacuum for 8 hours at a temperature of -50°C to o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of honeycomb-shaped porous bismuth oxide, which belongs to the technical field of the preparation of a semiconductor functional material. The preparation method comprises the following steps: by adopting dilute nitric acid as a solvent, adopting bismuth nitrate pentahydrate as a bismuth source and adopting a urea solution as a precipitant, stirring and reacting, then filtering, washing and vacuum freeze drying to prepare a precursor material containing porous bismuth hydroxide, then stirring and mixing the precursor material and organic matters such as starch, standing and molding the mixed material in a greenhouse to obtain mold slurry, mixing the mold slurry and ethanol solution, fermenting in the presence of oxygen, introducing ozone into the system, after microorganisms are dormant, collecting surface-layer flotage of a fermenting tank, washing and drying, and then calcining, thus obtaining the honeycomb-shaped porous bismuth oxide. The porous bismuth oxide is of a honeycomb-shaped micro structure, and is high in porosity, large in specific surface area and excellent in photocatalytic performance and reusability.

Description

technical field [0001] The invention discloses a preparation method of honeycomb porous bismuth oxide, which belongs to the technical field of preparation of semiconductor functional materials. Background technique [0002] Metal oxides such as titanium oxide, zinc oxide, copper oxide, iron oxide, and bismuth oxide are important semiconductor materials, which are widely used in magnetic storage media, solar energy conversion, electronic devices, and catalysis. Studies by Ding Peng, Zhang et al. have shown that bismuth oxide can be used as a photocatalyst to degrade various environmental pollutants. However, the bismuth oxide photocatalyst in the suspension system is difficult to settle and separate, resulting in increased recycling costs. Although the subsequent development of immobilization technology has solved the problem of catalyst separation and recovery, the catalyst loaded on the carrier is prone to deactivation during long-term use. On the one hand, because the cat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/18C02F1/30C02F101/30
CPCB01J23/18B01J35/04B01J35/1019C02F1/30C02F2101/308
Inventor 潘道文许蘅
Owner 薛向东
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products