Small-size block polymer material rapidly assembled at low quenching temperature as well as preparation and application of small-size block polymer material

Abstract

The invention relates to a small-size block polymer material assembled at a low quenching temperature as well as preparation and application of the small-size block polymer material. Particularly, the invention discloses a block copolymer which has a glass transition temperature below 120 DEG C. The invention also discloses a preparation method and the application of the block copolymer. The block copolymer can realize excellent phase separation and rapid patterning at a relatively low annealing temperature (e.g., 80 DEG C) and relatively short annealing time (e.g., 30 seconds), and is etched to obtain a photoetch pattern with extremely high resolution (e.g., 5 nm half-pitch), thereby providing a new photoetch means for the further extension of Moore's Law and photoetching semiconductors smaller than 10 nm, even 5 nm (half-pitch).

Description

technical field

[0001] The invention relates to the field of materials, in particular to a small-sized block polymer material that can be assembled rapidly at a low quenching temperature and its preparation and application. Background technique

[0002] The research and development of nanomaterials and nanodevices is a hot topic in the field of materials in the 21st century. How to quickly and easily obtain stable and fine nanostructures is the common goal pursued by scientific researchers and industrial manufacturers. Especially in the field of semiconductors, it is very important to precisely control the size and morphology of nanostructures and obtain microstructures with smaller size defects. Such materials have broad application prospects in nanoelectronic devices such as next-generation semiconductors, displays, storage, sensors, and sustained drug release. At the same time, nanomaterials also have the advantages of large information storage, fast working speed, preci...

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