Small-size block polymer material rapidly assembled at low quenching temperature as well as preparation and application of small-size block polymer material

A self-assembly, block copolymer technology, applied in the field of materials, can solve the problems of high annealing temperature, hindering application, long annealing time, etc.

Active Publication Date: 2017-10-13
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the self-assembly of existing block copolymer materials (such as PS-b-PMMA) usually requires a higher annealing temperature (above 160°C) and a longer annealing time (6 hours), which is time-consuming and energy-consuming. The process is difficult to meet the needs of modern industrial production, and the PS-b-PMMA material has some defects after self-assembly on the wafer, which hinders its application in actual production

Method used

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  • Small-size block polymer material rapidly assembled at low quenching temperature as well as preparation and application of small-size block polymer material
  • Small-size block polymer material rapidly assembled at low quenching temperature as well as preparation and application of small-size block polymer material
  • Small-size block polymer material rapidly assembled at low quenching temperature as well as preparation and application of small-size block polymer material

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Experimental program
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preparation example Construction

[0106] The present invention also provides a method for preparing the block copolymer, the method comprising the steps of:

[0107] 1) provide a homopolymer and modified monomers, wherein,

[0108] The homopolymer is polymerized from monomers selected from the group consisting of alkenyl and R 3 Substituted C6-C10 aryl, alkenyl and R 3 Substituted C6-C10 heteroaryl compounds containing 0-4 heteroatoms selected from N, O, S and P, wherein R 3 is selected from the group consisting of none, halogen, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxy;

[0109] The modified monomer is selected from the group consisting of: where R 1 H, halogen, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxy, substituted or unsubstituted C6-C10 aryl, R 2 is selected from the group consisting of: substituted or unsubstituted C1-C30 alkyl, substituted or unsubstituted C3-C30 cycloalkyl; the substitution refers to being substit...

Embodiment 1A

[0142] Example 1A type block copolymer PS-PPDFMA-3-21 (R 1 =CH 3 , R 2 =C 12 H 10 F 15 , R 3 = none) preparation

[0143] 3 mL of styrene (PS, ) and 30 mL of tetrahydrofuran were treated with dibutylmagnesium solution (1 M, the solvent was n-hexane) at 40° C. for 0.5 h, and transferred to a reaction flask. The reaction flask was returned to room temperature, stirred evenly, and then placed in a cooling bath at -40°C for 15 minutes. 0.5 mL of sec-BuLi (1M, n-hexane as the solvent) was added, and the reaction was kept at -40°C for 15 min. The temperature of the dried and modified low-temperature quenched methacrylate monomer A (1.6 g) was lowered to -30°C, dropped into the reaction system containing styrene, and kept at -40°C for 30 min. The product was precipitated in ethanol to give 3.5 g of a white solid.

[0144] figure 1 For the block copolymer PS-PPDFMA-3-21 1 H-NMR spectrum.

[0145] from figure 1 It can be seen that the characteristic H peaks of both block...

Embodiment 2A

[0151] Example 2A type block copolymer PS-PPDFMA-3-46 (R 1 =CH 3 ,R 2 =C 12 H 10 F 15 , R 3 = none) preparation

[0152] 2 mL of styrene and 30 mL of tetrahydrofuran were treated with dibutylmagnesium solution (1 M, n-hexane as the solvent) at 40° C. for 0.5 h and transferred to a reaction flask. The reaction flask was returned to room temperature, stirred evenly, and then placed in a cooling bath at -50°C for 15 minutes. Add 0.5 mL of sec-BuLi (1M, the solvent is n-hexane), and keep the reaction at -50 °C for 15 min. The temperature of the dried modified methacrylate monomer A (1.6 g) was lowered to -30°C, dropped into the reaction system containing styrene, and kept at -50°C for 30 min. The product was precipitated in ethanol to give a white solid 2.6 g in 90% yield.

[0153] Block copolymer PS-PPDFMA-3-46 1 H-NMR spectrum and figure 1 similar.

[0154] The GPC results of the block copolymer PS-PPDFMA-3-46 were similar to those of PS-PPDFMA-3-21, with a number av...

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Abstract

The invention relates to a small-size block polymer material assembled at a low quenching temperature as well as preparation and application of the small-size block polymer material. Particularly, the invention discloses a block copolymer which has a glass transition temperature below 120 DEG C. The invention also discloses a preparation method and the application of the block copolymer. The block copolymer can realize excellent phase separation and rapid patterning at a relatively low annealing temperature (e.g., 80 DEG C) and relatively short annealing time (e.g., 30 seconds), and is etched to obtain a photoetch pattern with extremely high resolution (e.g., 5 nm half-pitch), thereby providing a new photoetch means for the further extension of Moore's Law and photoetching semiconductors smaller than 10 nm, even 5 nm (half-pitch).

Description

technical field [0001] The invention relates to the field of materials, in particular to a small-sized block polymer material that can be assembled rapidly at a low quenching temperature and its preparation and application. Background technique [0002] The research and development of nanomaterials and nanodevices is a hot topic in the field of materials in the 21st century. How to quickly and easily obtain stable and fine nanostructures is the common goal pursued by scientific researchers and industrial manufacturers. Especially in the field of semiconductors, it is very important to precisely control the size and morphology of nanostructures and obtain microstructures with smaller size defects. Such materials have broad application prospects in nanoelectronic devices such as next-generation semiconductors, displays, storage, sensors, and sustained drug release. At the same time, nanomaterials also have the advantages of large information storage, fast working speed, preci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F293/00C08F212/08C08F220/22C08L53/00C07C69/653C07C69/54B82Y30/00
CPCB82Y30/00C07C69/54C07C69/653C08F212/08C08F220/22C08F293/00C08L53/00C08L2203/02C08L2203/20
Inventor 邓海李雪苗李杰
Owner FUDAN UNIV
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