Light emitting diode module for surface mount technology and method of manufacturing the same
A light-emitting diode and area technology, applied in electrical components, electric solid devices, circuits, etc., can solve problems such as reliability impact, luminosity reduction, and current accumulation, and achieve high conductivity and avoid local current accumulation.
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Embodiment 1
[0040] image 3 is a cross-sectional view of a light emitting diode (LED) according to a first exemplary embodiment of the present invention.
[0041] refer to image 3 , the first semiconductor layer 110 , the active layer 120 , the second semiconductor layer 130 , and the reflective pattern 140 are formed on the substrate 100 .
[0042] The substrate 100 can be made of any material capable of inducing the growth of the first semiconductor layer 110 . Accordingly, the substrate 100 may include sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga2O3), or silicon. In particular, the substrate 100 may be a sapphire substrate.
[0043] Likewise, the substrate 100 may be a substrate without surface treatment. The substrate 100 may be a patterned substrate. Also, the surface of the substrate 100 may have a moth-eye structure. For example, the substrate 100 m...
Embodiment 2
[0094] Figures 9 to 18 are a plan view and a cross-sectional view explaining a method of manufacturing an LED module according to a second exemplary embodiment of the present invention.
[0095] refer to Figure 9 and 10 , by cutting in direction A-A' Figure 9 The cross-sectional view obtained from the plan view in Figure 10 middle.
[0096] That is, the first semiconductor 110, the active layer 120, and the second semiconductor layer 130 are sequentially stacked on the substrate 100, and the mesa region 150 is prepared using an etching process. A portion of the surface of the first semiconductor layer 110 is exposed through the mesa region 150 . Also, a reflective pattern 140 is formed on the second semiconductor layer 130 as shown in Embodiment 1. Referring to FIG.
[0097] In the drawings of this embodiment, the reflective pattern 140 is exaggerated for simplicity. The exaggerated reflective pattern 140 is the reflective pattern 140 prepared according to Example 1. ...
Embodiment 3
[0138] Figure 19 is a cross-sectional view of an LED package according to a third exemplary embodiment of the present invention.
[0139] refer to Figure 19 , in reference to Figure 17 and 18 It is described that after the resulting final structure is decomposed into individual unit modules, the fluorescent layer 300 is provided on the side and rear of each unit module. Fabrication of the phosphor 300 includes rearranging a plurality of separate unit modules so that the substrate 100 faces upward, and the phosphor paste is covered on the substrate 100 . In this case, the phosphor paste can also cover the sides of the module. Then, the fluorescent paste is cured and disassembled into individual modules.
[0140] Meanwhile, a packaging substrate 400 is provided. The first bonding pad 430 and the second bonding pad 440 may be disposed on the package substrate and spaced apart from each other. The soldering resistor layer 420 has openings exposing portions of upper regio...
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