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A method for inducing the growth of perovskite crystals by group iii-v quantum dots

A technology for growing crystals and III-V, which is applied in the field of III-V quantum dots induced growth of perovskite crystals, which can solve the problem that quantum dots cannot be bonded with Pb and X halogen elements, and achieves low cost and process reliability. Control and easy operation

Inactive Publication Date: 2018-02-27
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In response to the above defects or improvement needs of the prior art, the object of the present invention is to provide a method for inducing the growth of perovskite crystals with III-V quantum dots, in which the key III-V quantum dot heteroepitaxial growth interface The type and structure of the ligand are improved, and compared with the prior art, it can effectively solve the problem that the III-V quantum dots cannot be bonded with Pb and X halogen elements, and the present invention uses the anti-solvent method for crystal growth , the process is controllable, the operation is simple, and quantum dot epitaxial growth of perovskite (MAPbX) can be carried out at room temperature 3 ) single crystal

Method used

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  • A method for inducing the growth of perovskite crystals by group iii-v quantum dots
  • A method for inducing the growth of perovskite crystals by group iii-v quantum dots
  • A method for inducing the growth of perovskite crystals by group iii-v quantum dots

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Embodiment 1

[0036] The experimental process of this embodiment is as follows: (1) wash 2 glass bottles and 25ml, 50ml two beakers successively with deionized water, acetone, Virahol, ethanol and deionized water. (2) 1mmol InBr 3 Pour into glass bottle A, add 3ml of DMF solution and stir to fully dissolve it. (3) Add 4 ml of n-octane solution dispersed with InAs quantum dots into glass bottle A, wherein the content of InAs quantum dots is 5 mg. Fully stir and mix, after the ligand exchange is completed (whether the exchange is completed can be judged by the color, because the solution of quantum dots is colored, and there are two phases in the mixed solution, which are incompatible with each other, when adding the colored When the solution is completely transferred from the upper layer to the lower layer, it indicates that the exchange is complete), remove the colorless n-octane solution in the upper layer (the solvent of the remaining lower layer solution is DMF), add n-octane solvent fo...

Embodiment 2

[0038] The experimental process of this embodiment is as follows: (1) wash 2 glass bottles and 25ml, 50ml two beakers successively with deionized water, acetone, Virahol, ethanol and deionized water. (2) 1mmol InBr 3 Pour into glass bottle A, add 3ml of DMF solution and stir to fully dissolve it. (3) Add 4 ml of n-octane solution dispersed with InAs quantum dots into glass bottle A, wherein the content of InAs quantum dots is 10 mg. Thoroughly stir and mix, remove the colorless n-octane solution in the upper layer after the ligand exchange is completed, and wash repeatedly 4-5 times to make precursor solution a. (4) 2mmol PbBr 2 and 1.6 mmol CH 3 NH 3 Put Br into glass bottle B, add 2ml of DMF solution and stir to make it fully dissolved to make precursor solution b. (5) Mix precursor solutions a and b into a 25ml beaker to seal and leave a hole. Add 6ml of dichloromethane into the 50ml beaker, put the 25ml beaker containing the precursor solution into the 50ml beaker, a...

Embodiment 3

[0040] The experimental process of this embodiment is as follows: (1) wash 2 glass bottles and 25ml, 50ml two beakers successively with deionized water, acetone, Virahol, ethanol and deionized water. (2) 1mmol InBr 3 Pour into glass bottle A, add 8ml of DMF solution and stir to fully dissolve it. (3) Add 4ml of n-octane solution dispersed with InAs quantum dots into glass bottle A, wherein the content of InP quantum dots is 5mg. Thoroughly stir and mix, remove the colorless n-octane solution in the upper layer after the ligand exchange is completed, and wash repeatedly 4-5 times to make precursor solution a. (4) 2mmol PbBr 2 and 1.6 mmol CH 3 NH 3 Put Br into glass bottle B, add 2ml of DMF solution and stir to make it fully dissolved to make precursor solution b. (5) Mix precursor solutions a and b into a 25ml beaker to seal and leave a hole. Add 6ml of dichloromethane into the 50ml beaker, put the 25ml beaker containing the precursor solution into the 50ml beaker, and s...

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Abstract

The invention discloses a method for growing perovskite crystal under induction of III-V quantum dots. The method comprises the following steps: (1) dispersing the III-V quantum dots into a non-polar solvent for acquiring a quantum dot solution, dissolving an inorganic ligand into a polar solvent for acquiring an inorganic ligand dispersion solution, mixing and stirring the quantum dot solution and the inorganic ligand dispersion solution and acquiring a polar solvent layer, namely, a corresponding first precursor solution; (2) uniformly dispersing PbX2 and MAX into the polar solvent, thereby acquiring a second precursor solution; and (3) mixing the first precursor solution with the second precursor solution and then utilizing an anti-solvent process to grow the crystal, thereby performing epitaxial inducing growth on the III-V quantum dots and acquiring the MAPbX3 perovskite crystal. According to the invention, the variety and structure of the heterogeneous epitaxial growth interface ligand on the key III-V quantum dots are improved, so that the problem that the III-V quantum dots cannot be bonded with Pb and X halogen elements can be effectively solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing and chemical synthesis, and more specifically relates to a method for inducing and growing perovskite crystals of III-V quantum dots. Background technique [0002] Semiconductor crystals with heteroepitaxial structures are the basis of multiple devices such as electro-lasers, solar cells, and light-emitting diodes, and have received extensive attention in many fields. The growth of heterostructures allows materials with complementary properties to form interfaces, resulting in composite materials with special and excellent properties. And the control of solid-state devices can be achieved by selecting the combination of electronic energy bands of heterogeneous phases. Quantum dots have excellent properties such as quantum tunable fluorescence emission, narrow and symmetrical fluorescence emission spectrum, and excellent optical stability. [0003] At present, there have been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B19/00C09K11/74C09K11/72
CPCC09K11/72C09K11/7492C30B19/00C30B29/12
Inventor 唐江刘婧牛广达王冲
Owner HUAZHONG UNIV OF SCI & TECH