Method for preparing single-crystal silicon texture-surface structure with low reflectivity

Abstract

The invention discloses a method for preparing a single-crystal silicon texture-surface structure with low reflectivity. A large amount of tetrahedral pyramids are formed on a surface of a silicon wafer by a traditional method, and many nanometer pores are formed in the surface of the silicon wafer by immersion processing of an alkali alcohol solution. The reflectivity of the surface of the silicon wafer with a nanometer structure in a pyramid shape can be further reduced; and meanwhile, the carrier recombination of the surface of the silicon wafer is only reduced slightly, almost no influence on the lifetime of a minority carrier of the silicon wafer is generated, so that the photoelectric conversion efficiency of a crystalline silicon solar cell can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of silicon chemistry, and in particular relates to a method for preparing a low-reflectivity monocrystalline silicon textured structure. Background technique [0002] The textured characteristic of monocrystalline silicon solar cells is one of the important factors affecting their conversion efficiency. At present, the existing methods of making texture include: chemical etching method, reactive ion etching method, photolithography method, mechanical groove method and so on. Among the several methods mentioned above, the mechanical grooving method uses multiple blades to simultaneously carve V-shaped grooves on the polysilicon surface to reduce optical reflection. Although it has the advantages of simple process and fast grooving speed, the depth of mechanical grooving is relatively deep, requiring relatively thick silicon wafers, which is not suitable for the production of thin substrate solar cells. At t...

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Problems solved by technology

[0004] In the prior art, someone proposes a method of directly preparing nanopores on the surface of a silicon wafer. This method can reduce the reflectivity of the surface of the silicon wafer to below 5%, but because it damages the surface of the silicon wafer too seriously, the silicon wafer will be damaged. The childbirth life expectancy of the

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