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A kind of preparation method of LED device

A technology of LED devices and microspheres, applied in the field of lighting, can solve the problems that quantum dot-LED devices cannot achieve high luminous efficiency and high light conversion efficiency, and it is difficult to meet market demands, and achieves maintaining luminous performance, excellent mechanical strength, and light transmission. high rate effect

Active Publication Date: 2019-08-20
GUANGDONG REAL FAITH LIGHTING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In summary, the current preparation methods of quantum dot-LED devices cannot achieve high luminous efficiency and high light conversion efficiency, and it is difficult to meet market demand. Only by finding a method for preparing quantum dot-LED devices with high luminous efficiency and high light conversion efficiency can Meet the needs of the market

Method used

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  • A kind of preparation method of LED device
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  • A kind of preparation method of LED device

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Embodiment 1

[0032] The invention provides a method for preparing a quantum dot-LED device (QD-LED device) with high luminous efficiency and high light conversion efficiency, including the following steps:

[0033] (1) Preparation of quantum dot microspheres

[0034] The schematic diagram of the preparation process of quantum dot microspheres is as follows figure 1 As shown, measure 10 mL of solvent and 2 mL of quantum dot solution (containing 0.5-5 mg of quantum dots, preferably 2 mg). The solvent can be n-hexane, chloroform, ethanol, methanol, etc., and weigh 100 mg of mesoporous material microspheres (Microsphere size can be 1-60μm, mesopore size 5-15nm, preferably 30μm size microsphere, 7nm pore size), act at 60℃ for a certain period of 1-4h, heat to remove n-hexane, wash microsphere powder, n-hexane Alkane, chloroform, ethanol, methanol and other solvents can be washed, preferably n-hexane, and dried in vacuum to obtain quantum dot microspheres. The electron microscope image of the prepare...

Embodiment 2

[0042] The QD-LED device was prepared according to the preparation method described in Example 1, and the graphene doping amount experiment was performed. The graphene size was controlled to be basically the same, the width or length was about 500nm, the thickness was 5nm, and the graphene dosage was changed. The mass fraction of the graphene powder in the mixed viscous solution was controlled to 0%, 0.01%, 0.03%, 0.05%, 0.1%, respectively, and QD-LED devices were prepared, and the long-term lighting stability was compared. Analysis and comparative analysis of the spectral energy distribution of QD-LED devices, the comparative analysis results of spectral energy distribution are shown in Table 1, and the comparative analysis results of long-term lighting stability are obtained as Image 6 Shown.

[0043] It can be seen from Table 1 that after graphene is added, the light-emitting characteristics of QD-LED devices are reduced to a certain extent. With the increase of graphene dopin...

Embodiment 3

[0050] The invention provides a method for preparing a white LED device (QD-LED device) with high luminous efficiency and high light conversion efficiency, including the following steps:

[0051] (1) Preparation of quantum dot microspheres

[0052] The quantum dot microspheres are prepared using the steps described in Example 1. The mesoporous material microspheres are mesoporous molecular sieves, and the quantum dots are red quantum dots.

[0053] (2) Preparation of quantum dot microsphere solution

[0054] Take 0.5 mg of graphene powder and add it to the ethanol aqueous solution. Graphene is a honeycomb flat film with a thickness of one or several atomic layers. The width or length of the graphene powder can be 100nm-2μm, preferably about 500nm, and the thickness is 5nm. Ultrasonic dispersion for 30 minutes, add 20mg of the quantum dot microspheres prepared above and 25mg of YAG: Ce yellow phosphor, then add 1g of silicone resin, mix well, vacuum deaeration, and obtain uniformly dis...

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Abstract

A method for preparing an LED device, wherein graphene is introduced into a quantum dot-LED packaging system. If graphene and quantum dots are directly mixed for a quantum dot-LED device, the graphene is directly composited with the quantum dots, thereby causing quenching of the quantum dots. In the preparation method, quantum dot microspheres are used to replace the quantum dot powder in a conventional LED device, and by means of mixing the quantum dot microspheres with graphene, the quenching of quantum dots can be prevented, and the light-emitting property of the quantum dots can be effectively maintained, thereby ensuring the high light conversion efficiency and the high light emission efficiency of an LED device.

Description

Technical field [0001] The present invention relates to the field of lighting technology, in particular to a method for preparing LED devices. Background technique [0002] Quantum dots are widely used due to their wavelength tunability, narrow half-width, and high quantum yield. At the same time, these excellent characteristics enable quantum dots to be used for wide color gamut displays. [0003] The general preparation method of quantum dot-LED (QD-LED) is to uniformly disperse quantum dots of a specific wavelength in a polymer matrix to form a light conversion layer, and then cover the LED chip to obtain the desired light-emitting characteristics. However, this method still encounters many problems, such as poor matching between the surface ligands of the quantum dots and the polymer; the quantum dots are easily corroded by water and oxygen; at the same time, the quantum dot layer cannot effectively utilize the light emission of the LED chip. These factors will lead to low lig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/50H01L33/52
Inventor 王恺陈威郝俊杰徐冰孙小卫
Owner GUANGDONG REAL FAITH LIGHTING TECH