Perovskite composite LED with multiple quantum wells and preparation method thereof

A multi-quantum well and perovskite technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve good lattice matching, less interface defects, and reduce non-radiative recombination centers

Active Publication Date: 2017-11-21
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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The perovskite composite multi-quantum well LED provided by the i

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  • Perovskite composite LED with multiple quantum wells and preparation method thereof
  • Perovskite composite LED with multiple quantum wells and preparation method thereof
  • Perovskite composite LED with multiple quantum wells and preparation method thereof

Examples

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preparation example Construction

[0036] The present invention also provides a method for preparing a perovskite composite multi-quantum well LED described in the above technical solution, comprising the following steps:

[0037] (1) preparing an electron injection layer on the surface of the substrate;

[0038] (2) with CH 3 NH 3 PB 3 Quantum dots, PbBr 2 and CH 3 NH 3 Br is a raw material, and a light-emitting layer is prepared on the surface of the electron injection layer obtained in the step (1) by a low-temperature solution method;

[0039] (3) preparing a hole injection layer on the surface of the luminescent layer obtained in the step (2) by using a low-temperature solution method;

[0040] (4) Prepare electrodes on the surface of the hole injection layer obtained in the step (3) by thermal evaporation to obtain a perovskite composite multi-quantum well LED.

[0041] In the present invention, the substrate is preferably cleaned before preparing the electron injection layer. In the present inven...

Embodiment 1

[0075](1) Cleaning the transparent conductive substrate, the substrate used is etched FTO glass.

[0076] Using transparent and conductive FTO glass as the substrate, it is chemically cleaned. The cleaning steps are as follows: firstly, the substrate is ultrasonically cleaned with acetone and isopropanol solutions for 10 minutes, and recycled once; then, it is cleaned with deionized water ultrasonically. , and finally dried with high-purity nitrogen for later use. The thickness of the FTO thin film is 150 nm.

[0077] (2) Preparation of n-type TiO 2 Electron injection layer.

[0078] Put the cleaned FTO glass into Plasma, and treat it with ultraviolet oxygen for 10 minutes. Then transferred into the glove box (nitrogen atmosphere) to spin-coat TiO at 5000rpm 2 The precursor solution was immediately taken out of the glove box and heated in a tube furnace at 4505 °C for 40 minutes, and then naturally cooled to 120 °C, then put back into the glove box. (TiO 2 Precursor solu...

Embodiment 2

[0092] The difference between this example and Example 1 is that in the preparation of n-type TiO 2 In the electron injection layer:

[0093] Put the cleaned FTO glass into Plasma, and treat it with ultraviolet oxygen for 10 minutes. Then transferred into the glove box (nitrogen atmosphere) to spin-coat TiO at 5000rpm 2 The precursor solution was immediately taken out of the glove box and heated in a tube furnace at 500°C for 40 minutes, and then returned to the glove box when the temperature was naturally cooled to 120°C.

[0094] (TiO 2 Precursor solution formula: 369uL titanium tetraisopropoxide (TTIP) in 1 bottle was dissolved in 2.5mL isopropanol, 35uL 2mol / L concentrated hydrochloric acid in 2 bottles was dissolved in 2.5mL isopropanol, and then 2 The acid solution in the bottle was added dropwise to 1 bottle. )

[0095] In this implementation, for TiO 2 Precursor solution spin-coating speed increase, for TiO 2 Control of film thickness, the film thickness is redu...

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Abstract

The invention provides a perovskite composite LED with multiple quantum wells and a preparation method thereof. The perovskite composite LED with multiple quantum wells comprises a substrate, an electronic injection layer, a luminous layer, a hole injection layer and an electrode which are arranged in sequence; and the luminous layer comprises a CH3NDH3PbBr3 film and CH3NH3PbI3 quantum points embedded in the CH3NDH3PbBr3 film. The perovskite quantum points CH3NH3PbI3 with relatively narrow band gaps are embedded in the perovskite continuous phase CH3NDH3PbBr3 film with a relatively big band gap; and due to high electronics, hole mobility and carrier diffusion length of the perovskite, the quantum effect of the quantum points and multiple quantum wells formed by the perovskite and the quantum points, carriers are guided to the quantum wells with low potential barriers for recombination luminescence. In addition, crystal lattices of perovskite with different components are matched well; the perovskite composite LED with multiple quantum wells, compared with other quantum well structures, has few interface defects; and the non-radiative recombination centers are reduced efficiently.

Description

technical field [0001] The invention relates to the technical field of electronic component preparation, in particular to a perovskite composite multi-quantum well LED and a preparation method thereof. Background technique [0002] In recent years, organic-inorganic hybrid perovskites (CH 3 NH 3 wxya 3 , X=Cl, I, Br) materials are widely used in the field of semiconductor light-emitting devices due to their superior characteristics such as long carrier diffusion distance, wide direct band, narrow absorption spectrum linewidth, and continuously adjustable bandwidth from blue light to near-infrared. widespread attention of the people. In particular, its preparation process does not require large-scale vacuum or high-temperature equipment, which has a huge market advantage in reducing costs. [0003] Based on the research on perovskite solar cells, the research and development of perovskite LEDs has also entered a new stage. Since 2013, perovskite solar cell technology has...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/30H10K50/11H10K71/00
Inventor 李述体戚明月罗萧宋伟东
Owner SOUTH CHINA NORMAL UNIVERSITY
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