LED epitaxial growth method

Abstract

The invention provides an LED epitaxial growth method, which comprises the steps of: growing a layer of Zn-doped InGaN:Zn structure layer at first after growing a multiple-quantum-well layer, blocking electrons from migrating to a p-type GaN and preventing a large amount of electrons from leaking from the multiple-quantum-well layer to a P-type layer, thereby increasing an electron concentration of the multiple-quantum-well layer; and growing an AlGaN:Mg thin barrier layer with a high Mg-doping concentration to provide a high hole concentration, and effectively driving holes to be injected into the multiple-quantum-well layer so as to increase a number of electron hole pairs of the multiple-quantum-well layer. In addition, a two-dimensional hole gas is generated at an interface between the InGaN:Zn structure layer and the AlGaN:Mg thin barrier layer through utilizing the condition that lattices of AlGaN and InGaN are not matched, the hole transverse expansion efficiency is increased by means of the two-dimensional hole gas, the hole injection level of the multiple-quantum-well layer is further improved, the operating voltage of an LED is reduced, and the light emitting efficiency of the LED is improved.

Description

technical field

[0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method. Background technique

[0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low efficiency.

[0003] The traditional LED structure epitaxial growth method includes the following steps:

[0004] 1. At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under certain conditi...

Examples

Embodiment 1

[0053] This embodiment provides an LED epitaxial growth method, figure 1 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to figure 1 , the LED epitaxy, including: a low-temperature GaN buffer layer 102, a non-doped GaN layer 103, an N-type GaN layer 104, a multi-quantum well layer 105, an InGaN:Zn structure layer 106, an AlGaN: Mg thin barrier layer 107 , P-type AlGaN layer 108 and P-type GaN layer 109 . Wherein, the N-type GaN layer 104 includes a first N-type GaN layer 1041 and a second N-type GaN layer 1042; the multi-quantum well layer 105 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 1051 and the GaN barrier layer 1052 is controlled at 7-15.

[0054] The LED epitaxial growth method provided in this embodiment uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and hig...

Embodiment 2

[0067] This embodiment provides an LED epitaxial growth method, image 3 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to image 3 , the LED epitaxy, including: a low-temperature GaN buffer layer 302, a non-doped GaN layer 303, an N-type GaN layer 304, a multi-quantum well layer 305, an InGaN:Zn structure layer 306, an AlGaN: Mg thin barrier layer 307 , P-type AlGaN layer 308 and P-type GaN layer 309 . Wherein, the N-type GaN layer 104 includes a first N-type GaN layer 1041 and a second N-type GaN layer 1042; the multi-quantum well layer 305 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 3051 and the GaN barrier layer 3052 is controlled at 7-15.

[0068] The LED epitaxial growth method provided in this embodiment uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and hig...

technical field

[0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method. Background technique

[0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low efficiency.

[0003] The traditional LED structure epitaxial growth method includes the following steps:

[0004] 1. At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under certain conditi...

Examples

Embodiment 1

[0053] This embodiment provides an LED epitaxial growth method, figure 1 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to figure 1 , the LED epitaxy, including: a low-temperature GaN buffer layer 102, a non-doped GaN layer 103, an N-type GaN layer 104, a multi-quantum well layer 105, an InGaN:Zn structure layer 106, an AlGaN: Mg thin barrier layer 107 , P-type AlGaN layer 108 and P-type GaN layer 109 . Wherein, the N-type GaN layer 104 includes a first N-type GaN layer 1041 and a second N-type GaN layer 1042; the multi-quantum well layer 105 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 1051 and the GaN barrier layer 1052 is controlled at 7-15.

[0054] The LED epitaxial growth method provided in this embodiment uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and hig...

Embodiment 2

[0067] This embodiment provides an LED epitaxial growth method, image 3 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to image 3 , the LED epitaxy, including: a low-temperature GaN buffer layer 302, a non-doped GaN layer 303, an N-type GaN layer 304, a multi-quantum well layer 305, an InGaN:Zn structure layer 306, an AlGaN: Mg thin barrier layer 307 , P-type AlGaN layer 308 and P-type GaN layer 309 . Wherein, the N-type GaN layer 104 includes a first N-type GaN layer 1041 and a second N-type GaN layer 1042; the multi-quantum well layer 305 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 3051 and the GaN barrier layer 3052 is controlled at 7-15.

[0068] The LED epitaxial growth method provided in this embodiment uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and hig...

Images