Resistive random access memory for inhibiting excessive growth of silver conductive channel and preparation method thereof

A resistive memory and conductive channel technology, applied in electrical components and other directions, can solve the problems of poor electrical uniformity of devices, inability to apply resistive memory, and increased peripheral control design, to achieve improved uniformity, low thermal conductivity, and improved The effect of productivity

Active Publication Date: 2017-11-24
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The publication number is CN101068038A, and the title of the invention is: The patent of the variable resistance memory device with a buffer layer on the lower electrode mentions that an oxide buffer layer is inserted to improve the performance of an oxide resistance variable memory, but it is only applicable to oxide materials. It cannot be applied to resistive memory of other materials
[0004] At present, resistive memory ba

Method used

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  • Resistive random access memory for inhibiting excessive growth of silver conductive channel and preparation method thereof
  • Resistive random access memory for inhibiting excessive growth of silver conductive channel and preparation method thereof
  • Resistive random access memory for inhibiting excessive growth of silver conductive channel and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1: A preparation method of a resistive memory that suppresses the excessive growth of silver conductive channels of the present invention has the following steps:

[0041] Step 1: Clean the bottom electrode, put the bottom electrode into a beaker, pour acetone until the liquid level exceeds the bottom electrode by more than 1cm, and ultrasonically clean the bottom electrode for 10 minutes; replace the beaker, put the bottom electrode into the beaker and pour ethanol , so that the liquid level exceeds the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 10 minutes; then replace the beaker, pour in secondary deionized water, and cause the liquid level to exceed the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 10 minutes;

[0042] Step 2: On the cleaned bottom electrode, use the method of magnetron sputtering, that is, argon gas is introduced in a high vacuum, and hundreds of kilovolts are applied between the ...

Embodiment 2

[0045] Embodiment 2: A method for preparing a resistive memory that suppresses the excessive growth of silver conductive channels of the present invention has the following steps:

[0046] Step 1: Clean the bottom electrode, put the bottom electrode into a beaker, pour acetone until the liquid level exceeds the bottom electrode by more than 1cm, and ultrasonically clean the bottom electrode for 15 minutes; replace the beaker, put the bottom electrode into the beaker and pour ethanol , so that the liquid level exceeds the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 15 minutes; then replace the beaker, pour in secondary deionized water, and cause the liquid level to exceed the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 15 minutes;

[0047] Step 2: On the cleaned bottom electrode, use the method of magnetron sputtering, that is, argon gas is introduced in a high vacuum, and hundreds of kilovolts are applied between the c...

Embodiment 3

[0050] Embodiment 3: A preparation method of a resistive variable memory that suppresses the excessive growth of silver conductive channels of the present invention has the following steps:

[0051] Step 1: Clean the bottom electrode, put the bottom electrode into a beaker, pour acetone until the liquid level exceeds the bottom electrode by more than 1cm, and ultrasonically clean the bottom electrode for 12 minutes; replace the beaker, put the bottom electrode into the beaker and pour ethanol , so that the liquid level exceeds the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 12 minutes; then replace the beaker, pour in secondary deionized water, and cause the liquid level to exceed the bottom electrode by more than 1cm, sonicate in the ultrasonic cleaner for 12 minutes;

[0052] Step 2: On the cleaned bottom electrode, use the method of magnetron sputtering, that is, argon gas is introduced in a high vacuum, and hundreds of kilovolts are applied bet...

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Abstract

The invention relates to a resistive random access memory for inhibiting the excessive growth of a silver conductive channel and a preparation method thereof. The resistive random access memory comprises a bottom electrode, a resistance transition layer, a silver solid electrolyte material buffer layer, and a top electrode. The resistance transition layer is arranged on the bottom electrode. The silver solid electrolyte material buffer layer is arranged on the resistance transition layer. The top electrode is arranged on the silver solid electrolyte material buffer layer. The preparation method of the resistive random access memory is simple, and the cost of batch production is low. According to the device prepared in the invention, the operation voltage is reduced, the channel excessive growth in starting is inhibited, the output quality is improved, the circulation uniformity is improved, and the device can be applied to the fields of resistive random access memories and artificial neural networks.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and relates to a resistive memory, in particular to a high-performance resistive memory which suppresses excessive growth of silver conductive channels and a preparation method thereof. Background technique [0002] In today's digital age of information explosion, people's production and life are inseparable from high-density, high-speed memory. The current mainstream commercial non-volatile memory mainly includes magnetic memory, optical disk memory and flash memory (Flash) memory. Magnetic memory has the advantages of large capacity and low price. However, its working process requires disk rotation, its mechanical structure is relatively complicated, and its read and write speed is relatively slow. Disadvantages of optical disk storage are similar to magnetic storage, in that the disk needs to be rotated and the mechanical structure is complicated during operation. Flash memory has the a...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/20H10N70/826H10N70/011
Inventor 徐海阳王中强黎旭红陶冶刘益春
Owner NORTHEAST NORMAL UNIVERSITY
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