Resistive random access memory for inhibiting excessive growth of silver conductive channel and preparation method thereof

Abstract

The invention relates to a resistive random access memory for inhibiting the excessive growth of a silver conductive channel and a preparation method thereof. The resistive random access memory comprises a bottom electrode, a resistance transition layer, a silver solid electrolyte material buffer layer, and a top electrode. The resistance transition layer is arranged on the bottom electrode. The silver solid electrolyte material buffer layer is arranged on the resistance transition layer. The top electrode is arranged on the silver solid electrolyte material buffer layer. The preparation method of the resistive random access memory is simple, and the cost of batch production is low. According to the device prepared in the invention, the operation voltage is reduced, the channel excessive growth in starting is inhibited, the output quality is improved, the circulation uniformity is improved, and the device can be applied to the fields of resistive random access memories and artificial neural networks.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and relates to a resistive memory, in particular to a high-performance resistive memory which suppresses excessive growth of silver conductive channels and a preparation method thereof. Background technique [0002] In today's digital age of information explosion, people's production and life are inseparable from high-density, high-speed memory. The current mainstream commercial non-volatile memory mainly includes magnetic memory, optical disk memory and flash memory (Flash) memory. Magnetic memory has the advantages of large capacity and low price. However, its working process requires disk rotation, its mechanical structure is relatively complicated, and its read and write speed is relatively slow. Disadvantages of optical disk storage are similar to magnetic storage, in that the disk needs to be rotated and the mechanical structure is complicated during operation. Flash memory has the a...

AI Technical Summary

Problems solved by technology

The publication number is CN101068038A, and the title of the invention is: The patent of the variable resistance memory device with a buffer layer on the lower electrode mentions that an oxide buffer layer is inserted to improve the performance of an oxide resistance variable memory, but it is only applicable to oxide materials. It cannot be applied to resistive memory of other materials

[0004] At present, resistive memory based on silver conductive channels has attracted wide attention, but this type of resistive memory still faces the influence of parasitic capacitance in the opening (set) process, resulting in large device randomness and low yield; the electrical uniformity of the device Not good; the tolerance of the device is reduced; it also increases the difficulty of peripheral control design and is difficult to integrate in a large area

Images