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A Wide Bandgap Semiconductor Element with Adjustable Voltage Level

A voltage level, semiconductor technology, applied in the field of wide bandgap semiconductor components

Active Publication Date: 2020-11-13
SHANGHAI HESTIA POWER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The main purpose of the present invention is to solve the problems in the production and actual operation of conventional wide-bandgap semiconductor elements

Method used

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  • A Wide Bandgap Semiconductor Element with Adjustable Voltage Level
  • A Wide Bandgap Semiconductor Element with Adjustable Voltage Level
  • A Wide Bandgap Semiconductor Element with Adjustable Voltage Level

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Embodiment Construction

[0028] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments to further understand the purpose, solution and effect of the present invention, but it is not intended to limit the scope of protection of the appended claims of the present invention.

[0029] Please refer to figure 1 and figure 2 As shown, they are respectively a schematic diagram of a wide bandgap semiconductor element according to an embodiment of the present invention and a schematic diagram of a packaging structure of a wide bandgap semiconductor element according to an embodiment of the present invention. The present invention is a wide bandgap semiconductor element with adjustable voltage levels. It includes a substrate 10 , a wide bandgap semiconductor power unit 20 and a level adjustment unit 30 , and the material of the substrate 10 is copper, aluminum, gold or a combination thereof. In addition, the mater...

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Abstract

The invention discloses an adjustable voltage level wide-gap semiconductor element, which includes a wide-gap semiconductor power unit and a level adjustment unit. The wide-gap semiconductor power unit has a source terminal. The level adjustment unit and the level adjustment unit The source terminal is electrically connected, wherein the level adjustment unit provides a displacement voltage through the source terminal to adjust a driving voltage level of the wide bandgap semiconductor power unit. The driving voltage level of the wide-bandgap semiconductor power unit is adjusted by the level adjustment unit, so that it can be used as a high-voltage enhancement transistor, and has the effects of cost reduction and switching speed improvement.

Description

technical field [0001] The present invention relates to a wide energy gap semiconductor element, especially a wide energy gap semiconductor element with adjustable voltage level. Background technique [0002] Among semiconductor devices, wide bandgap semiconductor devices have the advantages of excellent saturation electron velocity, electric field withstand voltage and heat dissipation coefficient, etc., and have recently attracted many companies or research institutes to invest in their development. At present, gallium nitride and silicon carbide semiconductor components are the most widely used. [0003] Among them, a high electron mobility transistor (HEMT) is taken as an example, which has the characteristics of high frequency, high breakdown voltage and low loss. Common high electron mobility transistors include native enhanced high electron mobility transistors (Pure enhancement mode high electron mobilitytransistor, referred to as Pure E-mode HEMT), embedded clampin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0944H01L23/495H01L25/16
CPCH01L23/49575H01L25/16H03K19/0944H01L2924/19107H01L2224/05554H01L2224/48247H01L2224/48257
Inventor 许甫任洪建中黄尧峯颜诚廷李傳英
Owner SHANGHAI HESTIA POWER INC