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Method for preparing graphene glass

A graphene, graphene film technology, applied in graphene, nano-carbon, coating and other directions, can solve problems such as safety hazards, and achieve the effects of uniform thickness, high quality and excellent adhesion

Inactive Publication Date: 2017-12-22
BEIJING CARBON CENTURY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the common carbon source for the preparation of graphene glass by CVD method is methane and other hydrocarbon gases, and a relatively high concentration of hydrogen is used as an auxiliary atmosphere. During the high-temperature sintering process, these flammable and explosive gases have certain safety hazards.

Method used

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Examples

Experimental program
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preparation example Construction

[0033] The method for preparing graphene glass of the present invention comprises:

[0034] Step 1, glass cleaning, ultrasonically clean the glass with water, ethanol, acetone, water, isopropanol, and water respectively, for 3-5 minutes each time (that is, a total time-consuming of 18-30 minutes), and blow dry with nitrogen;

[0035] Step 2. Using the glass as the substrate, in a low-pressure environment, the ambient temperature is raised to 900°C-1100°C, a reducing atmosphere gas is introduced, and then a carbon source gas is introduced according to a flow rate of 10-200 sccm to grow the graphene film. After a period of time, stop feeding the carbon source gas and the reducing atmosphere gas, and the ambient temperature naturally drops to room temperature to obtain a graphene film on the quartz glass. The carbon source gas is at least one of methanol gas and ethanol gas.

[0036] In the method for preparing graphene glass of the present invention, the reducing atmosphere gas ...

Embodiment 1

[0055] Example 1: A quartz glass sheet is ultrasonically cleaned with pure water, ethanol, acetone, water, isopropanol, and water for 3 minutes in sequence, and dried with nitrogen; the cleaned quartz glass is placed in a furnace tube of a chemical vapor deposition system, and the tube Set the furnace temperature to 1050°C, and after vacuuming to about 10Pa, clean the entire gas circuit with 500 sccm argon for 5 minutes; turn on the hydrogen, set the argon and flow rate to 475 sccm, the hydrogen flow rate to 25 sccm, and the proportion of hydrogen to argon The volume ratio of the hydrogen mixture is 5%; open the argon gas path loaded with ethanol, adjust the flow rate of the argon gas to 100 sccm, adjust the vacuum pump to make the pressure in the tube furnace about 1000 Pa, keep the growth at a constant temperature for 100 min, and stop feeding the carbon source gas and reducing atmosphere gas, and then naturally cool down to room temperature to obtain the graphene glass provi...

Embodiment 27

[0071] Example 27: According to the process steps of Example 24, after the deposition time is 30 minutes, stop feeding the carbon source gas, keep the reducing gas unobstructed, keep the pressure and temperature constant, and after annealing for 60 minutes, naturally cool down to obtain a quartz glass sheet Graphene with strong adhesion.

[0072] Wipe slowly the graphene glass that embodiment 24 and embodiment 27 obtains with the power of 1N 100 times, the effect that obtains is as follows Figure 5 As shown, obvious friction traces can be observed on the surface of the graphene glass in Example 24, and its absorption has decreased by 21.23%. No obvious friction traces have been observed on the surface of the graphene glass in Example 27, and the absorption has only decreased by 2.15%. Therefore, by increasing the The time in the low-pressure reducing atmosphere can increase the adhesion of graphene to the quartz glass sheet.

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Abstract

The invention relates to a method for preparing graphene glass. The method comprises the following steps: 1) cleaning glass, respectively using water, ethanol, acetone, water, isopropanol and water for ultrasonically cleaning the glass, cleaning for 3-5 minutes at each time and using nitrogen for drying; 2) by taking the glass as a substrate, raising the environment temperature to 900 DEG C-1100 DEG C under low pressure environment, introducing reducing atmosphere gas, introducing carbon source gas at a flow rate of 10-200sccm into the carbon source gas, growing the graphene film for a period of time, and then naturally cooling the environment temperature to room temperature, thereby acquiring a graphene film on the quartz glass, wherein the carbon source gas is at least one of methyl alcohol gas and ethyl alcohol gas. The technical scheme of the invention provides the method for preparing the graphene film by taking methyl alcohol or ethyl alcohol as a carbon source; the flow of the required methyl alcohol or ethyl alcohol is less; the experimental process is safe; the acquired graphene film is uniform in thickness and high in quality; the graphene films in different thickness can be acquired; the graphene film with high adhesive force with the quartz glass sheet can be acquired.

Description

technical field [0001] The invention relates to the preparation of carbon, in particular to a method for preparing graphene glass. Background technique [0002] Graphene is made of carbon atoms with sp 2 A monolayer of two-dimensional atomic crystals in which hybridized orbitals are arranged in a honeycomb lattice. Graphene is the thinnest and toughest nano-material known, and its hardness exceeds that of diamond; single-layer graphene is almost completely transparent, with only 2.3% absorbance; thermal conductivity is as high as 5300W / m K, and resistivity is only 10-6Ω· cm, is the most excellent conductor of heat and electricity. Due to its excellent physical and chemical properties, graphene has important research and application value in many application fields. [0003] At present, the commonly used graphene film preparation method mainly adopts chemical vapor deposition (CVD) technology to grow graphene on the surface of metal substrates, such as copper-based graphen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C01B32/186
CPCC03C17/22C03C2218/152C03C2218/31
Inventor 邢飞闫立群磨玉茹张同林
Owner BEIJING CARBON CENTURY TECH CO LTD
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