A thermally tuned twdm-pon laser and its manufacturing method
A TWDM-PON and laser technology, applied in the field of lasers, can solve problems such as high cost, low thermal efficiency, and slow temperature response speed, and achieve the effects of improving performance and life, reducing processing difficulty, and improving heating efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0036]An embodiment of the present invention provides a thermally tuned TWDM-PON laser, such as figure 1 , figure 2 and image 3 As shown, it includes a substrate 101, a buffer layer 102, a lower confinement layer 103, a multiple quantum well layer 104, an upper confinement layer 106, a grating layer 107 and an ohmic contact layer 108, and the multiple quantum well layer 104 and the upper confinement layer An etch-stop layer 105 is disposed between 106, and a mesa-shaped ridge waveguide 211 structure is etched on the etch-stop layer 105.
[0037] Wherein, the mesa-shaped ridge waveguide 211 structure is wet-etched through a photoresist mask pattern, and the etching depth is precisely controlled to be close to the top of the multiple quantum wells. The precise control of the corrosion depth depends on the corrosion rate difference between the corrosion barrier layer 105 and other materials (for example: the upper limiting layer 106, the grating layer 107 and the ohmic contac...
Embodiment 2
[0049] The embodiment of the present invention also provides a method for manufacturing a thermally tuned TWDM-PON laser, including a substrate 101, a buffer layer 102, a lower confinement layer 103, a multiple quantum well layer 104, an upper confinement layer 106, a grating layer 107 and an ohmic The epitaxial wafer formed by the contact layer 108 is characterized in that an etching stop layer 105 is arranged between the multi-quantum well layer 104 and the upper confinement layer 106 of the epitaxial wafer, such as Figure 5 As shown, the method also includes:
[0050] In step 201, a ridge waveguide pattern is fabricated by using a photoresist mask, exposure, and development, and etched in an etching solution to obtain a deep groove 210 to form an inverted mesa ridge waveguide structure 211 .
[0051] Wherein, the length of time that the epitaxial wafer is further immersed in the etching solution after being etched to the etch stop layer 105 can be controlled to complete th...
Embodiment 3
[0064]Compared with Embodiment 1, which focuses more on the structural elaboration, the embodiment of the present invention also sorts out the optional parameter quantities of each layer structure in terms of the feasible parameter configuration in the art. Specifically: the conventional laser structure is in N An epitaxial buffer layer 102 on a substrate 101 with a thickness of 500-1000nm; a lower confinement layer 103 with a thickness of 100-200nm; a multiple quantum well 104 with a thickness of 30-120nm; a corrosion barrier layer 105 with a thickness of 10-50nm; an upper confinement layer 106, Thickness 100-200nm; grating layer 107, thickness 30-100μm; ohmic contact layer 108, thickness 1-3μm. Through the photosensitive photoresist mask, exposure and development, etch the deep trench 210 to form an inverted mesa ridge waveguide structure 211, the width of the upper surface of the inverted mesa ridge waveguide structure 211 is 0.2-0.8 μm wider than the width of the small surf...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More