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Method for preparing boron nitride nanotube from gaseous oxide

A technology of boron nitride nanotubes and oxides, which is applied in the field of materials, can solve the problems of high cost, limiting the performance research and practical application of boron nitride nanomaterials, and low purity, and achieve the effect of increasing yield

Inactive Publication Date: 2017-12-29
ZHANGJIAGANG SHANMU NEW MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the preparation of boron nitride nanomaterials has problems such as harsh synthesis conditions, small yield, low purity, and high cost, which seriously limit the performance research and practical application of boron nitride nanomaterials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Method for preparing boron nitride nanotubes from gaseous oxides

[0019] (1), the amorphous boron powder is placed in a vacuum environment, and filled with nitrogen as a protective gas;

[0020] (2), heating up to 1250°C at a rate of 10°C, and filling NH at a rate of 50 sccm 3 gas, and N at a rate of 40sccm 2 As a carrier gas of water vapor or oxygen, boron nitride nanotubes are formed on the surface of the metal substrate by chemical vapor deposition, and the reaction time is 4 hours.

[0021] (3), wash the sample several times with dilute hydrochloric acid, distilled water and ethanol, and dry it in a vacuum drying oven.

[0022] The product is analyzed by XRD, SEM, TEM and FTIR, and it is proved that the product is a boron nitride nanotube.

[0023] The yield was 94%, and the purity was 97%.

[0024] The obtained boron nitride nanotube has high crystallinity and large yield, the average diameter of the nanotube is 80nm, and the distribution of the diameter is un...

Embodiment 2

[0027] Method for preparing boron nitride nanotubes from gaseous oxides

[0028] (1), the amorphous boron powder is placed in a vacuum environment, and filled with nitrogen as a protective gas;

[0029] (2), heating up to 1350°C at a rate of 10°C, and filling NH at a rate of 50 sccm 3 gas, and N at a rate of 10sccm 2 As the carrier gas of water vapor or oxygen, boron nitride nanotubes are formed on the surface of the metal substrate by chemical vapor deposition, and the reaction time is 3 hours.

[0030] (3), wash the sample several times with dilute hydrochloric acid, distilled water and ethanol, and dry it in a vacuum drying oven.

[0031] The product is analyzed by XRD, SEM, TEM and FTIR, and it is proved that the product is a boron nitride nanotube.

[0032] The yield was 93%, and the purity was 95%.

Embodiment 3

[0034] Method for preparing boron nitride nanotubes from gaseous oxides

[0035] (1), the amorphous boron powder is placed in a vacuum environment, and filled with nitrogen as a protective gas;

[0036] (2), heating up to 1250°C at a rate of 8°C, and filling NH at a rate of 50 sccm 3 gas, and N at a rate of 50 sccm 2 As the carrier gas of water vapor or oxygen, boron nitride nanotubes are formed on the surface of the metal substrate by chemical vapor deposition, and the reaction time is 3 hours.

[0037] (3), wash the sample several times with dilute hydrochloric acid, distilled water and ethanol, and dry it in a vacuum drying oven.

[0038] The product is analyzed by XRD, SEM, TEM and FTIR, and it is proved that the product is a boron nitride nanotube.

[0039] The yield was 95%, and the purity was 96%.

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Abstract

The invention discloses a method for preparing boron nitride nanotubes from gaseous oxides. By adopting the method, irregular boron powder is adopted as a boron source, an ammonia gas is adopted as a nitrogen source, and gaseous oxides are adopted as auxiliary oxides, the boron nitride nanotubes are synthesized by using a chemical vapor deposition method at 1250-1350 DEG C. By adopting the method disclosed by the invention, the oxides can be continuously supplemented in the reaction process, the reaction can be implemented continuously, and the yield of nanotubes is greatly increased. The boron nitride nanotubes prepared by using the method can be applied to light emitting materials.

Description

technical field [0001] The application belongs to the field of material technology, in particular to a method for preparing boron nitride nanotubes from gaseous oxides. Background technique [0002] Boron nitride nanotubes have a similar structure to carbon nanotubes. In 1994, Rubio et al. predicted the existence of boron nitride nanotubes theoretically. In 1995, Chopra et al. successfully synthesized boron nitride nanotubes, thus opening the Prelude to the study of boron nanotubes. Boron nitride nanotubes have excellent chemical stability and heat resistance. Theoretical and experimental studies have shown that they are wide-gap semiconductors, and their electrical properties are not affected by their nanotube diameter and chirality. Boron nitride nanotubes also have high toughness and high strength comparable to carbon nanotubes, and can be used for reinforcement, toughening and modification of materials. The unique properties of boron nitride nanotubes have important ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064B82Y40/00
CPCC01B21/0641C01P2002/72C01P2002/82C01P2004/03C01P2004/04C01P2004/13C01P2006/80
Inventor 范佳晨赵云龙徐丹徐凯徐再赵维达
Owner ZHANGJIAGANG SHANMU NEW MATERIAL TECH DEV