Photoresist stripping liquid

A stripping solution and photoresist technology, applied in the processing of photosensitive materials, etc., can solve the problems of corrosion of metal wiring, difficult to reuse, short service life, etc., and achieve the effect of preventing corrosion, saving recycling costs, and long service life

Inactive Publication Date: 2018-01-05
SHENZHEN CAPCHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned water-based stripping solution has obvious price advantages compared with the organic stripping solution, but due to the presence of a relatively large amount of water, it has problems such as short service life, poor stripping ability, serious corrosion of metal wiring, and difficulty in recycling. The stripping liquid used in China is an organic stripping liquid. In the prior art, the main component of the above-mentioned organic stripping liquid is ethanolamine, and there is also a certain amount of organic solvent, such as DMSO, but this kind of stripping liquid can only be used generally. In the Al process with Mo structure, it cannot be used for ITO / Ag / ITO; and the content of ethanolamine is as high as 60%, which is very corrosive. In addition, due to the low melting point of the solution, crystallization is prone to occur at low temperatures

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0035] The photoresist stripping liquid of the present embodiment comprises organic amine compound, organic solvent, additive and deionized water; Said additive is selected from 8-hydroxyquinoline, oleic acid triethanolamine grease, aspartic acid triethanolamine salt or alkane Alcohol amide; in the photoresist stripping solution, the weight percentage content of the organic amine compound is 15%, the weight percentage content of the organic solvent is 84.8%, the weight percentage content of the additive is 0.1%, and the balance for water. Organic amine compound selected from 1,4-dimethyl-1H-imidazole, 7-aminoindazole, 5-aminotetrazole, 1-amino-4-methylpiperazine, propanolamine, isopropanolamine or ethanolamine at least one of the The organic solvent is selected from at least one of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol tert-butyl ether or diethylene glycol ethyl ether. The crystallization temperature of the photoresist strip...

Embodiment 2

[0037] Only "the weight percentage content of the organic amine compound is 20%, the weight percentage content of the organic solvent is 79.3%, the weight percentage content of the additive is 0.5%, and the balance is water; the additive is selected from 8- The composition of hydroxyquinoline, oleic acid triethanolamine fat, aspartic acid triethanolamine salt and alkanolamide" is different from Example 1, and others are all the same as Example 1.

Embodiment 3

[0039] Only "the weight percentage content of the organic amine compound is 16%, the weight percentage content of the organic solvent is 83.5%, the weight percentage content of the additive is 0.3%, and the balance is water; the additive is selected from 8- Hydroxyquinoline and oleic acid triethanolamine fat " are different from embodiment one, and others are all identical with embodiment one.

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Abstract

The invention relates to a photoresist stripping liquid. The photoresist stripping liquid is characterized by comprising an organic amine compound, an organic solvent and an additive, wherein the additive is selected from at least one of 8-hydroxyquinoline, [(2-hydroxyethyl)imino]di-2,1-ethanediyl dioleate, triethanolamine aspartate or alkanolamide; in the photoresist stripping liquid, the contentof the organic amine compound accounts for 15-30wt%, the content of the organic solvent accounts for 70-85wt%, and content of the additive accounts for 0.1-0.5wt%; and in the photoresist stripping liquid, the total content of all constituents accounts for 100%. By the photoresist stripping liquid, rapid stripping of photoresist in ITO/Ag/ITO and Mo/Al/Mo structural layers can be achieved, good low-temperature performance is achieved, and the problems of corrosion to a metal matching line, environmental pollution, poor safety of an operator, toxicity, poor stripping effect and the like are effectively solved.

Description

technical field [0001] The invention relates to chemical etching technology, in particular to a photoresist stripping solution. Background technique [0002] Photoresist, also known as photoresist, is mainly composed of three components: photosensitive resin, sensitizer and solvent. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After exposure, development, etching, diffusion, ion implantation, metal deposition and other processes, the required micro-patterns are transferred from the mask to the processed substrate, and finally the remaining photoresist in the unexposed part is washed away by the stripping solution , so as to complete the entire pattern transfer process. Of course, for panels with different processes, due to differences in process and photoresist components, there are certain...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 鄢艳华康威尹静雅陈昊
Owner SHENZHEN CAPCHEM TECH
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