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Polishing pad, polyurethane polishing layer and preparation method thereof

A polishing layer, polyurethane technology, applied in the direction of manufacturing tools, metal processing equipment, grinding devices, etc., to improve hydrolysis resistance, improve uniformity, and highlight the effect of polishing

Active Publication Date: 2018-01-09
HUBEI DINGLONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These differences can negatively impact demanding applications such as wafers with low-k patterns

Method used

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  • Polishing pad, polyurethane polishing layer and preparation method thereof
  • Polishing pad, polyurethane polishing layer and preparation method thereof
  • Polishing pad, polyurethane polishing layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0050] In the raw materials for the preparation of the prepolymer, the polyfunctional isocyanate includes but not limited to one or both of aromatic isocyanate and aliphatic isocyanate. It is preferable to use 90 mol% or more of aromatic isocyanates, more preferably 95 mol% or more, and especially preferably 100 mol%.

[0051] Aromatic isocyanates may be aromatic diisocyanates. Aromatic diisocyanates include but are not limited to 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2'-diphenylmethane diisocyanate, 2,4'-diphenylmethane diisocyanate, 4 , one of 4'-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate or more.

[0052] The aliphatic isocyanates may be aliphatic diisocyanates. The aliphatic diisocyanate includes but not limited to one or more of ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, and 1,6-hexamethylene diisocyanate. The ali...

Embodiment 1

[0088] The present embodiment provides a kind of polishing layer, and its preparation method is as follows:

[0089] Step 1. Treatment of the isocyanate-terminated polyurethane prepolymer (or prepolymer for short).

[0090] 100 parts by mass of an isocyanate-terminated prepolymer obtained by reacting toluene diisocyanate and polytetrahydrofuran (containing 8.75 to 9.05% by mass of unreacted NCO groups) was heated to 80°C and degassed under vacuum (-0.095MPa) for 2 hour, so that the gas and small molecule compounds in the prepolymer are removed; then add 0.77 parts by mass of the hollow microporous polymer with an average diameter of 40 microns, and make the hollow microporous polymer evenly disperse in the prepolymer under stirring , degas again under vacuum (-0.095MPa) for 2 hours, then lower the temperature to 50°C, and set aside;

[0091] Step 2, preparation of curing agent composition.

[0092] Heat 23.27 parts by mass of MOCA to 116°C to completely melt into a clear tra...

Embodiment 2～11

[0111] Using the same process as in Example 1, selecting different types of aliphatic diamines and prepolymers with different NCO contents, hollow microporous polymers with different average diameters, and different chain extension coefficients to obtain polishing layers with different effects , the proportions of each raw material and the results are summarized in Table 1 and Table 2. The amounts of all materials are parts by mass.

[0112] Table 1 Polyurethane polishing layer raw materials

[0113]

[0114] Table 2 Physical and chemical properties of polyurethane polishing layer

[0115]

[0116]

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Abstract

The invention relates to a polishing pad, a polyurethane polishing layer and a preparation method thereof, and belongs to the field of a polishing technology for chemical mechanical planarization processing. The polyurethane polishing layer with the coefficient of thermal expansion being 70 to 200ppm / DEG C contains a reaction product generated by multi-component reaction. The multiple components comprise an isocyanate end-capped prepolymer, a hollow microporous polymer and a curing agent composition. The curing agent composition comprises 5-55 weight percent of aliphatic diamine composition, 0-8 weight percent of polyamine composition, and 40-90 weight percent of aromatic bifunctional composition. The polyurethane polishing layer has the density being 0.6- 1.1g / cm<3>, the shore harness being 45-70 D, and the elongation at break being 50-450 percent. A preparation process of the polyurethane polishing layer is simple, low in cost and small in energy consumption, and the polyurethane polishing layer prepared through the process has the advantages of high hydrolytic stability, uniform density, stable removal rate and the like.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization polishing, in particular to a polishing pad, a polyurethane polishing layer and a preparation method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, with the upgrading of process technology, the size between the wire and the gate is constantly shrinking, and the photolithography technology has higher and higher requirements for the flatness of the wafer surface. Since IBM successfully applied chemical mechanical polishing (CMP) technology to the production of 64Mb DRAM in 1991, CMP technology has developed rapidly and has been widely used in the planarization of semiconductor wafers, storage disks and high-precision optical materials. Chemical mechanical polishing, also known as chemical mechanical polishing, is a technology that combines chemical corrosion with mechanical removal, and is currently the only technology that can...

Claims

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Application Information

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IPC IPC(8): B24B37/24B24B37/013B24D11/00B24D3/28
Inventor 朱顺全罗乙杰刘敏
Owner HUBEI DINGLONG CO LTD
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