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Method and equipment for preparing TMDCs (two-dimensional transition metal disulphide compound single crystals)

A transition metal and dichalcogenide technology, which is applied in the field of preparing two-dimensional transition metal dichalcogenide single crystals, can solve problems such as non-conformity and achieve the effect of avoiding waste and realizing multiple reuse.

Inactive Publication Date: 2018-01-16
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the above methods can obtain TMDCs crystals and thin films, they are not strictly single-layer WSe 2 film

Method used

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  • Method and equipment for preparing TMDCs (two-dimensional transition metal disulphide compound single crystals)
  • Method and equipment for preparing TMDCs (two-dimensional transition metal disulphide compound single crystals)
  • Method and equipment for preparing TMDCs (two-dimensional transition metal disulphide compound single crystals)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] use as figure 1 In the CVD growth equipment, the heating module 1 is a low-temperature zone, the heating module 2 is a high-temperature zone, and the heating module 3 is a reaction zone.

[0040] A preparation of monolayer MoS 2 Methods. Include the following steps:

[0041] (1), at first, Mo metal foil is in the mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio=2:1) ​​Soak for 2 hours, wash and dry. Then, the Mo metal foil is annealed. The annealing process is to raise the temperature to 500° C. at a rate of 40° C. / min, and the annealing is performed for 5 minutes. The cleaned Mo metal foil is then placed at the heating module 2 (high temperature zone) of the quartz tube;

[0042] (2), wash the cut single-throw quartz sheet and dry it for later use;

[0043] Preferably in a mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio = 2:1) Soak for 2 hours, then use ace...

Embodiment 2

[0048] use as figure 1 In the CVD growth equipment, the heating module 1 is a low-temperature zone, the heating module 2 is a high-temperature zone, and the heating module 3 is a reaction zone.

[0049] A preparation of monolayer WS 2 Methods. Include the following steps:

[0050] (1), first, put W metal foil in the mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio=2:1) ​​Soak for 2 hours, wash and dry. Then, the W metal foil is annealed. The annealing process is to raise the temperature to 500° C. at a rate of 40° C. / min, and the annealing is performed for 5 minutes. Then the cleaned W metal is placed at the heating module 2 (high temperature zone) of the quartz tube;

[0051] (2), wash the cut single-throw quartz sheet and dry it for later use;

[0052] Preferably in a mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 Volume ratio = 2:1) Soak for 2 hours, then use acetone, isopr...

Embodiment 3

[0057] On the basis of embodiment 1 or 2, the heating method is as figure 2 Electric heating method; or for such as image 3 electric induction heating method; or for image 3 microwave heating method.

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Abstract

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and manufacturing equipment for TMDCs (two-dimensional transition metal disulphide compound single crystals). The controllability and the sample quality of preparation of TMDCs samples are improved by regulating the volatilizing rate of a precursor by directly controlling the reaction temperature on the surface of a metal through current, voltage, electromagnetic waves and the like loaded on a metal foil precursor. Meanwhile, the overall gas phase deposition process is a surface chemical reaction; the consumption amount of a reaction precursor is low; the purpose of producing the TMDCs continuously for a long time can be achieved. In the process of preparing the TMDCs by adopting the equipment, metal oxide powder is not required to be taken as the precursor, so that the waste of the precursor is avoided, and the metal precursor is utilized repeatedly. The method and the equipment for preparing the TMDCs can be used for hot wall and cold wall CVD (chemical vapour deposition) systems, and has good universality.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a method and equipment for preparing a two-dimensional transition metal dichalcogenide single crystal. Background technique [0002] Transition metal chalcogenides have attracted extensive attention and research due to their atomic-level thickness and unique optoelectronic properties. In recent years, a large number of articles have reported the controllable preparation of transition metal chalcogenides, their exotic optoelectronic properties, and their applications in optoelectronics such as photodetection, luminescence, spin and energy valley electronics. Therefore, how to controllably prepare high-quality TMDCs single crystals has become a common concern of researchers and industrialization. [0003] The equipment proposed in this patent design can be used for large-area continuous production of single-layer or multi-layer two-dimensional transition m...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B25/00C23C16/30
Inventor 时玉萌李贺楠陈龙龙姚慧珍丁东
Owner SHENZHEN UNIV
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