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Gallium nitride epitaxial wafer passivation method

A technology of gallium nitride and epitaxial wafers, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as performance degradation of gallium nitride devices, achieve suppression of current collapse phenomenon, simple preparation method, and improve surface state Effect

Active Publication Date: 2018-01-30
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Application Information

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a passivation method for gallium nitride epitaxial wafers to solve the technical problem in the prior art that the performance of gallium nitride devices is degraded due to the existence of surface states on the surface of gallium nitride heterojunction materials

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Embodiment 1

[0032] Please refer to figure 1 , a passivation method for gallium nitride epitaxial wafers, comprising the following steps:

[0033] Step S101, growing a gallium nitride epitaxial layer on a substrate.

[0034] Optionally, step S101 is implemented in the following manner: passing a gallium source and a nitrogen source into the reaction chamber through a carrier gas; and epitaxially growing a gallium nitride epitaxial layer on the substrate through chemical vapor deposition of a metal organic compound.

[0035] Further, the gallium source is trimethylgallium or triethylgallium, and the nitrogen source is ammonia gas.

[0036] Further, the carrier gas is hydrogen or nitrogen.

[0037] In the embodiment of the present invention, the substrate includes, but is not limited to, a sapphire substrate, a silicon nitride substrate, and a graphene substrate. A gallium nitride epitaxial layer is grown on the substrate by Metal-organic Chemical Vapor Deposition (MOCVD). When epitaxial...

Embodiment 2

[0051] Please refer to figure 2 , figure 2It is a curve diagram of growing GaN epitaxial wafers on graphene substrates by MOCVD method provided by Embodiment 2 of the present invention. First, hydrogen gas is introduced into the reaction chamber, and the temperature of the reaction chamber is raised within the time period of 0s to 800s to 1000°C, and keep the temperature at 1000°C during the period of 800s to 1500s, and bake the substrate at a high temperature to remove impurities on the surface of the substrate. During the period of 1500s to 1800s, reduce the temperature of the reaction chamber to 580°C, and during the period of 1800s to 2000s, keep the temperature at 580°C, and pass the gallium source and nitrogen source into the reaction chamber through the carrier gas , grow a low-temperature GaN nucleation layer on the substrate. During the period of 2000s to 2500s, the temperature of the reaction chamber is raised to 1000°C again, and within the period of 2500s to 50...

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Abstract

The invention discloses a gallium nitride epitaxial wafer passivation method, which relates to the technical field of semiconductors. The method comprises the steps that a gallium nitride epitaxial layer grows on a substrate; a barrier layer grows on the gallium nitride epitaxial layer; aluminum atoms are deposited on the barrier layer; and the gallium nitride epitaxial wafer is exposed to the air, so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer. According to the invention, the surface state of a material can be improved; the phenomenon of current collapse can be effectively suppressed; a passivation protective layer is generated by natural oxidation in the air; additional equipment is not needed; and the preparation method is simple.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a passivation method for gallium nitride epitaxial wafers. Background technique [0002] Gallium nitride (GaN) materials have broad prospects for development in the fields of optoelectronics and microelectronics due to their wide band gap and high electron velocity. Gallium Nitride Heterojunction Field Effect Transistor Due to the existence of surface states caused by crystal defects in GaN heterojunction materials, under high field stress, electron traps on the surface of heterojunction materials will capture hot electrons generated under high field , the electrons accumulated on the surface of the material will produce depletion effect, which will deteriorate the saturation current, transconductance and other parameters of the device. The existence of material surface states will cause the current collapse phenomenon of the device when it is applied at high frequency an...

Claims

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Application Information

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IPC IPC(8): H01L21/3205H01L21/321H01L29/20
Inventor 王波房玉龙尹甲运张志荣郭艳敏李佳芦伟立冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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