Perovskite solar cell with oscillating coil and preparation method thereof
A technology of solar cells and oscillating coils, applied in the field of solar cells, can solve the problems of poor thermal stability, thermal decay of performance, reduction of power generation efficiency of solar cells, etc., and achieve the effect of suppressing the reduction of power generation efficiency
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Embodiment 1
[0021] Such as figure 1 As shown, the perovskite solar cell structure is: a transparent conductive electrode (1) and an electron transport layer (2) stacked on the electrode in sequence, a perovskite structure light absorption layer (3), black phosphorus and graphene hole transport layer (4) and positive electrode (5). The oscillation coil 6 is disposed between the light absorbing layer and the electron transport layer.
Embodiment 2
[0023] A method for preparing a perovskite solar cell containing an oscillating coil; specifically as follows:
[0024] 1. On the transparent conductive electrode 1, the electron transport layer 2 is prepared by hydrothermal method or atomic layer deposition or spin coating process. The electron transport layer 2 of the present invention can be a CdS nanorod array, which is formed by a hydrothermal method in an autoclave , Cd(NO 3 ) 2 4H 2 The depth of O is 0.8~1.2mmol / L, the concentration of thiourea is 2.8~3.2mmol / L, the concentration of glutathione is 0.5~0.8mmol / L, the reaction temperature in the autoclave is 180~200℃, CdS The growth time of the nanorod array is 2.5-3.5 hours.
[0025] 2. Deposition of a Si layer on the electron transport layer 2 by CVD, followed by formation of SiO on the Si layer by in-situ oxidation 2 Specifically, the epitaxial growth can be realized by rapid CVD, using tetrachlorosilane as the precursor gas, the epitaxial temperature is 200-350 de...
Embodiment 3
[0031] A method for preparing a perovskite solar cell containing an oscillating coil; specifically as follows:
[0032] 1. On the transparent conductive electrode 1, the electron transport layer 2 is prepared by hydrothermal method, atomic layer deposition or spin coating process;
[0033] 2. Deposition of a Si layer on the electron transport layer 2 by CVD, followed by formation of SiO on the Si layer by in-situ oxidation 2 layer;
[0034] 3. On SiO 2 A photoresist mask is formed on the layer, followed by dry etching of Si and SiO 2 The layers form a helix to form an oscillating coil. Among them, a photolithographic mask with gradually changing light transmittance can be used for exposure treatment. The exposure of the photoresist in places with low light transmittance is insufficient, so the formed line width is narrow (that is, the line width is also gradually changed), and then Using photoresist as a mask and then conventional dry etching to form an oscillating coil wi...
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