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Method for preparing ultrahigh-purity gas through low temperature separation, and low temperature separation system

A separation system and pure gas technology, applied in separation methods, dispersed particle separation, chemical instruments and methods, etc., can solve the problems of relatively high purity requirements of raw material gas, low separation efficiency of towers, and small product output, etc., to achieve Low operating pressure, reduced investment cost, and high separation efficiency

Active Publication Date: 2018-02-02
衢州杭氧气体有限公司 +2
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  • Application Information

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Problems solved by technology

This method can obtain high-purity liquid products, but the product output is small, and the purity of the raw material gas is required to be higher than 90%. If the purity cannot meet the requirements, pretreatment must be carried out first, such as condensation, chemical reaction, primary distillation, etc. , the operation is complex
[0006] To sum up, the existing methods for preparing high-purity gases all have disadvantages. Some towers have low separation efficiency, limited products, and some have relatively high requirements for the purity of raw gas.

Method used

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  • Method for preparing ultrahigh-purity gas through low temperature separation, and low temperature separation system

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Embodiment 1

[0033] Example 1: Preparation of ultra-high-purity nitrogen.

[0034] Impurities such as oxygen, argon, neon, helium, hydrogen, and carbon monoxide usually exist in nitrogen, among which neon, helium, and hydrogen are light component impurities. Most of the traditional nitrogen purification methods use the adsorption method. Since the purity of the product depends on the ability and activation degree of the adsorbent, it is not only difficult to select the adsorbent, but also the adsorption purification effect is not good, and the energy consumption is high. It is difficult to achieve ultra-high purity for the electronics industry. Nitrogen requires a purity of 6.0N grade (99.9999%) or higher.

[0035] Applying the method and equipment for producing ultra-high-purity gas by low-temperature separation of the present invention can simultaneously remove light components and heavy-component impurities in nitrogen, and can easily obtain ultra-high-purity nitrogen products above 6.0...

Embodiment 2

[0040] The preparation of embodiment 2 ultra-high purity carbon tetrafluoride

[0041] At present, there are mainly four methods for producing carbon tetrafluoride on an industrial scale, and the method of producing carbon tetrafluoride by fluorocarbon synthesis has become the most industrially produced carbon tetrafluoride because of its advantages such as easy availability of raw materials and controllable process. common method. Carbon tetrafluoride is directly synthesized from amorphous carbon and fluorine gas. Impurities in carbon tetrafluoride after alkali washing include nitrogen, oxygen, carbon monoxide, hexafluoroethane, octafluoropropane, etc., among which nitrogen, oxygen, and carbon monoxide are light groups Sub-impurities. Commonly used methods for the purification of carbon tetrafluoride include adsorption, membrane separation, and cryogenic distillation.

[0042] Applying the method and equipment for separating and purifying gas at low temperature of the prese...

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Abstract

The invention discloses a method for preparing an ultrahigh-purity gas through low temperature separation, and a low temperature separation system. The method comprises the following steps: a target product raw gas is introduced into a first heavy-fraction removal tower, a gas discharged from the tower top of the first heavy-fraction removal tower goes through a tower top condenser, one part of the obtained condensed liquid returns to the first heavy-fraction removal tower from the tower top as a reflux liquid, the remaining condensed liquid is introduced to a second heavy-fraction removal tower as an extracted material, and heavy component impurities are discharged from the tower bottom of the first heavy-fraction removal tower; a gas discharged from the tower top of the second heavy-fraction removal tower goes through a condenser, the obtained condensed liquid returns to the second heavy-fraction removal tower from the tower top as a reflux liquid, uncondensed light component impurities are discharged, and heavy component impurities are discharged from the tower bottom; and a material extracted from the middle part of the second heavy-fraction removal tower is introduced to a light-fraction removal tower, a gas discharged from the tower top of the light-fraction removal tower goes through a condenser, the condensed liquid returns to the light-fraction removal tower from the tower top as a reflux liquid, uncondensed light component impurities are discharged, heavy component impurities are discharged from the tower bottom, and a liquid product is extracted from the middle part of the light-fraction removal tower. The method and the system have the characteristics of simple device, high device efficiency, wide range of the prepared product, and low requirement of the purity of the raw gas.

Description

technical field [0001] The invention relates to a method for producing ultra-high-purity gas by low-temperature separation and a low-temperature separation system, belonging to the technical field of low-temperature separation. Background technique [0002] High-purity gas has been widely used in many industrial fields. The purity of high-purity gas used in the electronics industry is generally required to reach 6.0N (99.9999%). High-purity gas plays a key role in the semiconductor chip manufacturing process. The higher the purity of the gas The higher the product quality, the better the product quality. VLSI and VLSI require gas purity higher than 6.0N. [0003] Currently known methods for preparing high-purity gases with a purity above 6.0N include: adsorption method, reaction method, rectification method or a combination of the above methods. Due to the fact that the adsorbent has a certain service life and needs to be replaced regularly, continuous industrial production...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/00
CPCB01D53/00B01D53/002
Inventor 包汉坡何晖康玉茹李剑锋李冬锋袁士豪朱程浩孙潇
Owner 衢州杭氧气体有限公司
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