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Preparation method and an application of Cd/CdS heterojunction visible light photocatalyst rich in sulfur vacancies

A photocatalyst and heterojunction technology, which is applied in the direction of catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc. Catalytic properties, limited CdS photocatalyst application research and other issues, to achieve excellent visible light photocatalytic performance, high light absorption and visible light catalytic efficiency, close contact effect

Active Publication Date: 2018-02-02
FUZHOU UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by its preparation method, this patented technology cannot flexibly control the morphology of the CdS matrix and generate abundant sulfur vacancies, so it cannot take advantage of the advantages of morphology control and defect engineering, and it is difficult to efficiently optimize the light absorption and light absorption of CdS. Catalytic properties
Zhang Tierui Group (L. Shang, B. Tong, H.Yu, G.I.N. Waterhouse, C. Zhou, Y. Zhao, M. Tahir, L.-Z. Wu, C.-H. Tung, T.Zhang, Advanced Energy Materials 6 (2016) 1501241) reported a Cd nanosheet-modified CdS nanoparticle and applied it to photocatalytic hydrogen production. The report pointed out that they first prepared Cd nanosheets by chemical reduction, and then sulfurized them to obtain Cd The composite catalyst of nanosheets and CdS, which has a high performance of photolysis of water to produce hydrogen, but also faces the constraints of the above problems, cannot give full play to the advantages of morphology control and defect engineering, which severely limits the application research of CdS photocatalysts
The preparation method and material morphology mentioned in the above patent and the paper are fundamentally different from this patent, and more importantly, there is a lack of abundant S vacancy defects that play a key role.

Method used

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  • Preparation method and an application of Cd/CdS heterojunction visible light photocatalyst rich in sulfur vacancies
  • Preparation method and an application of Cd/CdS heterojunction visible light photocatalyst rich in sulfur vacancies
  • Preparation method and an application of Cd/CdS heterojunction visible light photocatalyst rich in sulfur vacancies

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preparation example Construction

[0023] Preparation of CdS precursor:

[0024] Add cadmium nitrate tetrahydrate and thiourea into a polytetrafluoroethylene reactor at a molar ratio of 1:3, add ethylenediamine to 60% of the volume of the reactor, stir magnetically until completely dissolved, and react at 200°C for 24 hours , the resulting product was naturally cooled to room temperature, washed four times with deionized water and ethanol respectively, the precipitate was collected by centrifugation, and dried in vacuum to obtain the CdS precursor.

Embodiment 1

[0026] Put 500mg of the prepared CdS in a muffle furnace for heat treatment at 400°C for 1h to obtain the intermediate CdO / CdS composite material, slowly add it to 50mL 1mol / L NaBH 4 solution, stirred at room temperature for 4 hours, filtered, washed and dried to obtain a Cd / CdS heterojunction visible photocatalyst rich in sulfur vacancies, labeled as Cd-CdS-1h.

Embodiment 2

[0028] Put 500mg of the prepared CdS in a muffle furnace for heat treatment at 400°C for 2h to obtain the intermediate CdO / CdS composite material, slowly add it to 50mL 1mol / L NaBH 4 solution, stirred at room temperature for 4 hours, filtered, washed and dried to obtain a Cd / CdS heterojunction visible photocatalyst rich in sulfur vacancies, labeled as Cd-CdS-2h.

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Abstract

The invention discloses a preparation method and an application of a Cd / CdS heterojunction visible light photocatalyst rich in sulfur vacancies. The method comprises the following steps: synthesizingan intermediate CdO / CdS composite material through a thermal treatment technology by using CdS prepared by a solvothermal technology as a precursor, and performing an in-situ chemical reduction technology by using sodium borohydride to directly obtain the Cd / CdS heterojunction visible light photocatalyst. The prepared Cd / CdS composite visible light photocatalyst contains a lot of sulfur vacancies,so the absorption and the utilization of visible lights by the catalyst are greatly improved, and the contact between highly-conductive Cd and CdS is close, thereby the photogenerated electrons can be well separated from holes, and the photocatalytic efficiency is high. The heterojunction photocatalyst has a high stability, has an excellent photocatalytic activity under the irradiation of visiblelights, and can be used for catalyzing photodegradation of water to produce hydrogen. The preparation method has the advantages of low requirements of preparation conditions, simplicity in operation,cheap and easily available raw materials, environmental protection, high visible light catalysis efficiency, and broad application prospect in the photocatalysis field.

Description

technical field [0001] The invention belongs to the technical field of material preparation and visible light photocatalysis, and in particular relates to a preparation method and application of a Cd / CdS heterojunction visible light catalyst rich in sulfur vacancies. Background technique [0002] With the rapid development of the economy, the problems of environmental pollution and energy shortage have become increasingly prominent, becoming two major challenges facing the development of human society in the 21st century. Semiconductor photocatalysis technology is based on the conversion and storage of solar energy, and uses light energy to drive photocatalytic reactions. Converting solar energy into chemical energy is considered to be an ideal way to solve the two problems of energy and environment. However, the application of photocatalyst technology in actual production still faces some problems. For example, low quantum efficiency, narrow photoresponse range of photoca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J35/10B01J37/08B01J37/16C01B3/04B82Y30/00
CPCB82Y30/00C01B3/042B01J27/04B01J37/08B01J37/16C01B2203/10B01J35/39B01J35/61Y02E60/36
Inventor 刘平王波黄学烟赵燕张璐璐
Owner FUZHOU UNIV
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