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Preparation method of high-strength high-conductivity copper-based composite material

A copper-based composite material, high conductivity technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve the problems of poor compatibility, can not take into account the strength and conductivity of composite materials, etc., to achieve compatibility High, taking into account both strength and conductivity, the effect of broad application prospects

Active Publication Date: 2018-02-16
南京晶质新型复合材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main technical problem to be solved by the present invention is to improve the copper-based composite material by directly adding reinforcing material which is common at present. There will be poor compatibility between the reinforcing material and the copper-based raw material, and the strength and electrical conductivity of the composite material cannot be taken into account. performance defects, a preparation method for high-strength and high-conductivity copper-based composites is provided

Method used

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  • Preparation method of high-strength high-conductivity copper-based composite material

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example 1

[0022] Mix rice husk and biogas slurry in a mass ratio of 1:5 and put it into a fermenter, seal the mouth of the tank and ferment for 3 days at a temperature of 35°C. Rinse 3 times and dry to obtain dry fermentation filter residue; mix the dry fermentation filter residue and iron powder according to the mass ratio of 50:1 and put it into a vacuum furnace, and feed argon into the vacuum furnace until all the air in the furnace is replaced. The temperature in the high-vacuum furnace is 1100°C, and the heat preservation reaction is carried out for 3 hours. After the reaction, the material is discharged, oxidized at 700°C for 3 hours and rinsed with 10% hydrofluoric acid for 3 times to obtain porous silicon carbide whiskers; Silicon carbide whiskers were soaked in a dopamine solution with a mass concentration of 2g / L for 1h, filtered to obtain a filter cake, and then the filter cake and a 30% copper chloride solution were mixed according to a mass ratio of 1:5, and then an ultrason...

example 2

[0024] Mix rice husk and biogas slurry at a mass ratio of 1:5 and put it into a fermenter, seal the mouth of the tank and ferment for 4 days at a temperature of 40°C. Rinse 4 times and dry to obtain dry fermentation filter residue; mix the dry fermentation filter residue and iron powder according to the mass ratio of 50:1 and put them into a vacuum furnace, and feed argon into the vacuum furnace until all the air in the furnace is replaced. The temperature in the high-vacuum furnace is 1300°C, and the heat preservation reaction is carried out for 4 hours. After the reaction, the material is discharged, and it is oxidized at 750°C for 4 hours and washed 4 times with 10% hydrofluoric acid to obtain porous silicon carbide whiskers; Silicon carbide whiskers were soaked in a dopamine solution with a mass concentration of 2g / L for 2h, filtered to obtain a filter cake, and then the filter cake and a cupric chloride solution with a mass fraction of 30% were mixed at a mass ratio of 1:5...

example 3

[0026]Mix rice husk and biogas slurry at a mass ratio of 1:5 and put it into a fermentation tank, seal the tank mouth and ferment for 5 days at a temperature of 45°C. Rinse 5 times and dry to obtain dry fermentation filter residue; mix the dry fermentation filter residue and iron powder according to the mass ratio of 50:1 and put them into a vacuum furnace, and feed argon into the vacuum furnace until all the air in the furnace is replaced. The temperature in the high-vacuum furnace is 1500°C, and the heat preservation reaction is carried out for 5 hours. After the reaction, the material is discharged, oxidized at 800°C for 5 hours, and washed 5 times with 10% hydrofluoric acid to obtain porous silicon carbide whiskers; Silicon carbide whiskers were soaked in a dopamine solution with a mass concentration of 2g / L for 2h, filtered to obtain a filter cake, and then the filter cake and a 30% copper chloride solution were mixed according to a mass ratio of 1:5, and an ultrasonic osc...

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Abstract

The invention relates to the technical field of preparation of conductive metal materials, in particular to a preparation method of a high-strength high-conductivity copper-based composite material. According to the preparation method of the high-strength high-conductivity copper-based composite material, firstly, porous structures are generated on the surfaces of rice hulls under the effect of biogas slurry microorganisms, then porous silicon carbide whiskers are formed through thermal transition under the catalytic action of iron powder, then polydopamine thin films adhere to the surfaces ofthe porous silicon carbide whiskers and micropores, and copper ions are fixed to the surfaces of the silicon carbide whiskers and internal pore spaces in a chelated mode through the polydopamine thinfilms; the polydopamine thin films are decomposed under the conditions of hydrogen and the high temperature firstly so that the copper ions can be exposed again, then the copper ions are reduced intopure copper through hydrogen, thus the compatibility between the silicon carbide whiskers and copper substrates is improved, and through vortex-shaped mutual jetting collision, internal titanium andsilicon carbide generate a chemical reaction to generate novel ceramic-reinforced TiC, Ti3SiC2 and TiSi2 phases so that the finally-prepared copper-based composite material can have the strength and electrical conductivity at the same time; and the preparation method has the wide application prospects.

Description

technical field [0001] The invention relates to the technical field of preparation of conductive metal materials, in particular to a method for preparing a high-strength and high-conductivity copper-based composite material. Background technique [0002] With the continuous development of information technology, the microelectronics industry has higher and higher requirements for conductive metal materials. The trend of this requirement is to hope that conductive metal materials not only have high conductivity, but also have high strength and high temperature resistance. For a long time, copper and copper alloys are commonly used conductive metal materials in industry, and more than 75% of copper and copper alloys are used in electrical appliances and electronics industries. Although pure copper has excellent electrical and thermal conductivity, its obvious disadvantage is that its hardness, tensile strength and creep strength are low, such as its strength is only 230 MPa ~ ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C47/16C22C47/04C22C49/02C30B29/36C22C49/14C22C101/14
CPCC22C47/04C22C47/16C22C49/02C22C49/14C30B29/36
Inventor 林茂兰
Owner 南京晶质新型复合材料科技有限公司
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